New Materials and Devices Enabling 5G Applications and Beyond
- 1st Edition - January 24, 2024
- Imprint: Elsevier
- Editor: Nadine Collaert
- Language: English
- Paperback ISBN:9 7 8 - 0 - 1 2 - 8 2 2 8 2 3 - 4
- eBook ISBN:9 7 8 - 0 - 1 2 - 8 2 3 4 5 0 - 1
New Materials and Devices for 5G Applications and Beyond focuses on the materials, device architectures, and enabling integration schemes for 5G applications and emerging technolog… Read more
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Request a sales quoteNew Materials and Devices for 5G Applications and Beyond focuses on the materials, device architectures, and enabling integration schemes for 5G applications and emerging technologies. The book gives a comprehensive overview of the tradeoffs, challenges, and unique properties of novel upcoming technologies. Starting from the application side and its requirements, the book examines different technologies under consideration for different functions, both conventional and more exploratory, and within this context the book provides guidance to the reader on how to possibly optimize the system for a particular application. This book aims at guiding the reader through the technologies required to enable 5G applications, with the main focus on mm-wave frequencies, up to THz. It is suitable for industrial researchers and development engineers, and researchers in materials science, device engineering, and circuit design.
- Reviews challenges and emerging opportunities for materials, devices, and integration to enable 5G technologies
- Includes discussion of technologies such as RF-MEMs, RF FINFETs, and transistors based on current and emerging materials (InP, GaN, etc.)
- Focuses on mm-wave frequencies up to the terahertz regime
Materials Scientists and Engineers; Electrical/Optical Engineers
- Cover image
- Title page
- Table of Contents
- Copyright
- List of contributors
- Chapter 1. Introduction to 5G applications and beyond
- Abstract
- 1.1 Introduction
- 1.2 Overview front-end technologies
- 1.3 Compound semiconductor devices
- 1.4 Heterogeneous integration
- 1.5 Summary
- References
- Chapter 2. FD-SOI and RF-SOI technologies for 5G
- Abstract
- 2.1 Introduction
- 2.2 Introduction to silicon-on-insulator technology
- 2.3 Partially depleted-silicon-on-insulator and fully depleted-silicon-on-insulator devices
- 2.4 Passives in silicon-on-insulator technology
- 2.5 Conclusion
- References
- Chapter 3. Radio frequency FinFET bulk silicon technology
- Abstract
- 3.1 Introduction
- 3.2 SiGe NPN heterojunction bipolar transistor
- 3.3 UTBSOI MOSFET
- 3.4 Radio frequency complementary metal-oxide semiconductor technology
- 3.5 Radio frequency FinFET
- 3.6 Radio frequency planar MOSFET versus FinFET
- 3.7 The radio frequency FinFET fabrication process flow
- 3.8 FinFET device structures
- 3.9 Radio frequency device parasitics
- 3.10 Parasitics resistances
- 3.11 FinFET parasitic capacitance
- 3.12 FinFET radio frequency device figures-of-merit
- 3.13 The 3D FinFET small signal model
- 3.14 FinFET radio frequency silicon results
- 3.15 Analog transistors
- 3.16 Radio frequency high-voltage (I/O) FETs
- 3.17 Gain-power efficiency
- 3.18 Substrate network
- 3.19 Noise in MOS transistors
- 3.20 Summary
- List of symbols
- List of acronyms
- References
- Chapter 4. Gallium nitride technologies for wireless communication
- Abstract
- 4.1 Introduction
- 4.2 Why gallium nitride?
- 4.3 Applications
- 4.4 Gallium nitride for power applications
- 4.5 Gallium nitride for wireless communication
- 4.6 Summary
- References
- Chapter 5. Heterojunction bipolar transistors for sub-THz applications
- Abstract
- 5.1 Introduction
- 5.2 Bipolar transistors
- 5.3 Silicon-germanium heterojunction bipolar transistor
- 5.4 InP heterojunction bipolar transistor
- 5.5 Device modeling
- 5.6 Optimizing the bipolar transistor
- 5.7 Summary
- References
- Chapter 6. InP-based monolithic microwave integrated circuit technologies for 5G and beyond
- Abstract
- 6.1 InP devices for millimeter-wave/terahertz wireless communications toward beyond 5G
- 6.2 InP device technologies
- 6.3 InP MMICs for 300-GHz-band transceiver
- 6.4 300-GHz-band InP transceiver and 120 Gb/s wireless data transmission
- 6.5 Conclusion
- Acknowledgements
- References
- Chapter 7. RF-MEMS for 5G: high performance switches and reconfigurable passive networks
- Abstract
- 7.1 A recap of RF-MEMS across two decades of research and discussion
- 7.2 5G services characteristics distilled into passive components specifications
- 7.3 Demand and supply: where RF-MEMS and 5G can meet
- 7.4 An example of RF-MEMS technology platform
- 7.5 Conclusions
- References
- Chapter 8. Antenna-in-package design considerations for millimeter-wave 5G
- Abstract
- 8.1 Introduction
- 8.2 Antenna design for mm-wave 5G handset applications
- 8.3 Scalable phased arrays for base-station applications
- 8.4 Conclusions
- References
- Chapter 9. Circuits for 5G applications implemented in FD-SOI and RF/PD-SOI technologies
- Abstract
- 9.1 Introduction
- 9.2 Link budget analysis
- 9.3 Switch
- 9.4 Low noise amplifier
- 9.5 Power amplifier
- 9.6 Conclusion
- References
- Chapter 10. Power amplifiers monolithic microwave integrated circuit design for 5G applications
- Abstract
- 10.1 Introduction
- 10.2 Transmitter architectures for massive multiple-input-multiple-output
- 10.3 Design of a sub 6 GHz Doherty power amplifier
- 10.4 Design of a mmWave Doherty power amplifier
- 10.5 Linearity improvement from circuit design
- 10.6 Conclusions
- References
- Index
- Edition: 1
- Published: January 24, 2024
- No. of pages (Paperback): 368
- No. of pages (eBook): 275
- Imprint: Elsevier
- Language: English
- Paperback ISBN: 9780128228234
- eBook ISBN: 9780128234501
NC
Nadine Collaert
Nadine Collaert has been involved in the theory, design, and technology of FinFET-based multi-gate devices, emerging memory devices, transducers for biomedical applications and the integration and characterization of biocompatible materials e.g. carbon-based materials.
From 2012 until April 2016 she was program manager of the imec LOGIC program, focusing on high mobility channels, TFET and nanowires.
Since April 2016 she is a distinguished member of technical staff responsible for the research on novel CMOS scaling approaches based on heterogeneous integration of new materials with Si and new material-enabled device and system approaches to increase functionality.
She has authored or coauthored more than 300 papers in international journals and conference proceedings. She has been a member of the CDT committee of the IEDM conference and she is still a member of the Program Committees of the international conferences ESSDERC and ULIS/EUROSOI. Nadine Collaert has been involved in the theory, design, and technology of FinFET-based multi-gate devices, emerging memory devices, transducers for biomedical applications and the integration and characterization of biocompatible materials e.g. carbon-based materials.
Affiliations and expertise
Program Director, Imec, Leuven, BelgiumRead New Materials and Devices Enabling 5G Applications and Beyond on ScienceDirect