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New Materials and Devices Enabling 5G Applications and Beyond
1st Edition - January 1, 2024
Editor: Nadine Collaert
Paperback ISBN:
9 7 8 - 0 - 1 2 - 8 2 2 8 2 3 - 4
New Materials and Devices for 5G Applications and Beyond focuses on the materials, device architectures, and enabling integration schemes for 5G applications and emerging… Read more
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New Materials and Devices for 5G Applications and Beyond focuses on the materials, device architectures, and enabling integration schemes for 5G applications and emerging technologies. The book gives a comprehensive overview of the tradeoffs, challenges, and unique properties of novel upcoming technologies. Starting from the application side and its requirements, the book examines different technologies under consideration for different functions, both conventional and more exploratory, and within this context the book provides guidance to the reader on how to possibly optimize the system for a particular application. This book aims at guiding the reader through the technologies required to enable 5G applications, with the main focus on mm-wave frequencies, up to THz. It is suitable for industrial researchers and development engineers, and researchers in materials science, device engineering, and circuit design.
- Reviews challenges and emerging opportunities for materials, devices, and integration to enable 5G technologies
- Includes discussion of technologies such as RF-MEMs, RF FINFETs, and transistors based on current and emerging materials (InP, GaN, etc.)
- Focuses on mm-wave frequencies up to the terahertz regime
Materials Scientists & Engineers; Electrical/Optical Engineers
1. Introduction: 5G and what does it mean? How it is different from 4G-LTE, challenges and opportunities2. Different applications: from user equipment to small cells to base-station and what are the requirements3. Overview of different technologies for RF-FEM and transceiver; introduce the radio-chip, what technologies are used now for the different components of the radio chip and what are the trends4. RF FinFET technologies and beyond: how do they compare to CMOS, ways to reduce parasitics and improvement path5. FDSOI and RF-SOI technologies6. SiGe HBT and BiCMOS7. RF GaN: a basestation technology only or also for UE? GaN-on-Si vs GaN-on-sapphire and GaN-SiC 8. Thin film materials for switches: 2D materials vs. RF-SOI/MEMS9. Filter technologies & materials10. The need for heterogeneous integration incl. 3D technologies11. Beyond 5G, the need for ever higher data-rates12. InP-based technologies: HEMT vs HBT13. RF packaging
- No. of pages: 275
- Language: English
- Published: January 1, 2024
- Imprint: Elsevier
- Paperback ISBN: 9780128228234
NC
Nadine Collaert
Nadine Collaert has been involved in the theory, design, and technology of FinFET-based multi-gate devices, emerging memory devices, transducers for biomedical applications and the integration and characterization of biocompatible materials e.g. carbon-based materials.
From 2012 until April 2016 she was program manager of the imec LOGIC program, focusing on high mobility channels, TFET and nanowires.
Since April 2016 she is a distinguished member of technical staff responsible for the research on novel CMOS scaling approaches based on heterogeneous integration of new materials with Si and new material-enabled device and system approaches to increase functionality.
She has authored or coauthored more than 300 papers in international journals and conference proceedings. She has been a member of the CDT committee of the IEDM conference and she is still a member of the Program Committees of the international conferences ESSDERC and ULIS/EUROSOI. Nadine Collaert has been involved in the theory, design, and technology of FinFET-based multi-gate devices, emerging memory devices, transducers for biomedical applications and the integration and characterization of biocompatible materials e.g. carbon-based materials.
Affiliations and expertise
Program Director, Imec, Leuven, Belgium