Nanotechnology for Microelectronics and Optoelectronics
- 1st Edition - July 11, 2011
- Authors: Raúl José Martín-Palma, José Martínez-Duart, Fernando Agullo-Rueda
- Language: English
When solids are reduced to the nanometer scale, they exibit new and exciting behaviours which constitute the basis for a new generation of electronic devices. Nanote… Read more
When solids are reduced to the nanometer scale, they exibit new and exciting behaviours which constitute the basis for a new generation of electronic devices.
Nanotechnology for Microelectronics and Optoelectronics outlines in detail the fundamental solid-state physics concepts that explain the new properties of matter caused by this reduction of solids to the nanometer scale. Applications of these electronic properties is also explored, helping students and researchers to appreciate the current status and future potential of nanotechnology as applied to the electronics industry.
- Explains the behavioural changes which occur in solids at the nanoscale, making them the basis of a new generation of electronic devices
- Laid out in text-reference style: a cohesive and specialised introduction to the fundamentals of nanoelectronics and nanophotonics for students and researchers alike
Materials scientists; post-grad students researching nanotechnology; Electrical engineers
Preface
About the Authors
Acknowledgements
Structure of the Book
Chapter 1: Mesoscopic Physics and Nanotechnologies
1.1 OUTLOOK OF THE BOOK
1.2 TRENDS IN NANOELECTRONICS AND OPTOELECTRONICS
1.3 CHARACTERISTIC LENGTHS IN MESOSCOPIC SYSTEMS
1.4 QUANTUM MECHANICAL COHERENCE
1.5 QUANTUM WELLS, WIRES, AND DOTS
1.6 DENSITY OF STATES AND DIMENSIONALITY
1.7 SEMICONDUCTOR HETEROSTRUCTURES
1.8 QUANTUM TRANSPORT
PROBLEMS
Chapter 2: Survey of Solid State Physics
2.1 INTRODUCTION
2.2 SHORT REVIEW OF QUANTUM MECHANICS
2.3 FREE ELECTRON MODEL OF A SOLID. DENSITY OF STATES FUNCTION
2.4 BLOCH THEOREM
2.5 ELECTRONS IN CRYSTALLINE SOLIDS
2.6 DYNAMICS OF ELECTRONS IN BANDS
2.7 LATTICE VIBRATIONS
2.8 PHONONS
PROBLEMS
Chapter 3: Review of Semiconductor Physics
3.1 INTRODUCTION
3.2 ENERGY BANDS IN TYPICAL SEMICONDUCTORS
3.3 INTRINSIC AND EXTRINSIC SEMICONDUCTORS
3.4 ELECTRON AND HOLE CONCENTRATIONS IN SEMICONDUCTORS
3.5 ELEMENTARY TRANSPORT IN SEMICONDUCTORS
3.6 DEGENERATE SEMICONDUCTORS
3.7 OPTICAL PROPERTIES OF SEMICONDUCTORS
PROBLEMS
Chapter 4: The Physics of Low-Dimensional Semiconductors
4.1 INTRODUCTION
4.2 BASIC PROPERTIES OF TWO-DIMENSIONAL SEMICONDUCTOR NANOSTRUCTURES
4.3 SQUARE QUANTUM WELL OF FINITE DEPTH
4.4 PARABOLIC AND TRIANGULAR QUANTUM WELLS
4.5 QUANTUM WIRES
4.6 QUANTUM DOTS
4.7 STRAINED LAYERS
4.8 EFFECT OF STRAIN ON VALENCE BANDS
4.9 BAND STRUCTURE IN QUANTUM WELLS
4.10 EXCITONIC EFFECTS IN QUANTUM WELLS
PROBLEMS
Chapter 5: Semiconductor Quantum Nanostructures and Superlattices
5.1 INTRODUCTION
5.2 MOSFET STRUCTURES
5.3 HETEROJUNCTIONS
5.4 QUANTUM WELLS
5.5 SUPERLATTICES
PROBLEMS
Chapter 6: Electric Field Transport in Nanostructures
6.1 INTRODUCTION
6.2 PARALLEL TRANSPORT
6.3 PERPENDICULAR TRANSPORT
6.4 QUANTUM TRANSPORT IN NANOSTRUCTURES
PROBLEMS
Chapter 7: Transport in Magnetic Fields and the Quantum Hall Effect
7.1 INTRODUCTION
7.2 EFFECT OF A MAGNETIC FIELD ON A CRYSTAL
7.3 LOW-DIMENSIONAL SYSTEMS IN MAGNETIC FIELDS
7.4 DENSITY OF STATES OF A 2D SYSTEM IN A MAGNETIC FIELD
7.5 THE AHARONOV–BOHM EFFECT
7.6 THE SHUBNIKOV–DE HAAS EFFECT
7.7 THE QUANTUM HALL EFFECT
PROBLEMS
Chapter 8: Optical and Electro-optical Processes in Quantum Heterostructures
8.1 INTRODUCTION
8.2 OPTICAL PROPERTIES OF QUANTUM WELLS AND SUPERLATTICES
8.3 OPTICAL PROPERTIES OF QUANTUM DOTS AND NANOCRYSTALS
8.4 ELECTRO-OPTICAL EFFECTS IN QUANTUM WELLS. QUANTUM CONFINED STARK EFFECT
8.5 ELECTRO-OPTICAL EFFECTS IN SUPERLATTICES. STARK LADDERS AND BLOCH OSCILLATIONS
PROBLEMS
Chapter 9: Electronic Devices Based on Nanostructures
9.1 INTRODUCTION
9.2 MODFETs
9.3 HETEROJUNCTION BIPOLAR TRANSISTORS
9.4 RESONANT TUNNEL EFFECT
9.5 HOT ELECTRON TRANSISTORS
9.6 RESONANT TUNNELLING TRANSISTOR
9.7 SINGLE ELECTRON TRANSISTOR
PROBLEMS
Chapter 10: Optoelectronic Devices Based on Nanostructures
10.1 INTRODUCTION
10.2 HETEROSTRUCTURE SEMICONDUCTOR LASERS
10.3 QUANTUM WELL SEMICONDUCTOR LASERS
10.4 VERTICAL CAVITY SURFACE EMITTING LASERS (VCSELs)
10.5 STRAINED QUANTUM WELL LASERS
10.6 QUANTUM DOT LASERS
10.7 QUANTUM WELL AND SUPERLATTICE PHOTODETECTORS
10.8 QUANTUM WELL MODULATORS
PROBLEMS
Index
- Edition: 1
- Published: July 11, 2011
- Language: English
RM
Raúl José Martín-Palma
Raúl José Martín-Palma is Adjunct Professor of Materials Science and Engineering at Universidad Autonoma de Madrid, Spain. His research interests include work in nanostructures and nanotechnology, optics and photonics.
Affiliations and expertise
Adjunct Professor of Materials Science and Engineering, Universidad Autonoma de Madrid, SpainJM
José Martínez-Duart
José Martínez-Duart is Professor of Physics at Universidad Autónoma de Madrid, Spain. He is the author about three hundred publications in peer-reviewed scientific journals. During the 70s, he was Assistant Professor at Penn State University and Rensselaer Polytechnic Institute, and Research Visiting Scientist at the IBM T.J. Watson Research Center. Later was the Director of the Solid State Physics Institute (CSIC) at Madrid, and the Applied Physics Department at Universidad Autónoma, Madrid.
He is the former President of the European Materials Research Society (EMRS), 2000-1, and the first President of the Spanish Materials Society. During the last twenty years he has been working on the electronic and optoelectronic properties of nanostructured materials. His previous books several books with Elsevier, serving as Co-Editor of the two-volumes, “Materials and Processes for Submicron Technologies” and “Current Trends in Nanotechnologies, as well as the first edition of the current book.
Affiliations and expertise
Professor of Physics, Universidad Autonoma de Madrid, SpainRead Nanotechnology for Microelectronics and Optoelectronics on ScienceDirect