Nanophotonics with Diamond and Silicon Carbide for Quantum Technologies

1st Edition - April 18, 2025
Imprint: Elsevier
Editors: Mario Agio, Stefania Castelletto
Language: English
Paperback ISBN:
9 7 8 - 0 - 4 4 3 - 1 3 7 1 7 - 4
eBook ISBN:
9 7 8 - 0 - 4 4 3 - 1 3 7 1 8 - 1

Nanophotonics with Diamond and Silicon Carbide for Quantum Technologies provides an in-depth overview of key developments in diamond and silicon carbide photonics to enable spin-p… Read more

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Nanophotonics with Diamond and Silicon Carbide for Quantum Technologies provides an in-depth overview of key developments in diamond and silicon carbide photonics to enable spin-photon interfaces, quantum computing, quantum imaging, and quantum sensing. Written by world experts, chapters discuss nanophotonics effects (atomic size point center properties in the materials), fabrication of photonic components and integrated photonics circuits, photonics and nanophotonics enabling quantum sensing, and quantum information and networks via spin-photon interface. This book is a valuable resource to researchers and professionals interested on the fundamentals, trends, and diamond and silicon carbide applications in the quantum technology industry.

Title of Book
Cover image
Title page
Table of Contents
Copyright
Dedication
List of contributors
Chapter 1 Introduction
Abstract
1.1 Motivations and aims of the book
1.2 Background of diamond and silicon carbide photonics towards quantum technologies
1.3 Overview of the book structure
References
Chapter 2 Diamond growth and properties for quantum technologies
Abstract
2.1 Introduction
2.2 Diamond synthesis
2.3 The nitrogen vacancy center in diamond
2.4 Diamond growth for photonic and quantum applications
References
Chapter 3 Micro- and nanofabrication techniques for single crystal diamond photonics
Abstract
3.1 Introduction
3.2 Substrate preparation
3.3 Patterning
3.4 Etching
3.5 Outlook
References
Chapter 4 Quantum micro–nanodevices fabricated in diamond by femtosecond laser and ion irradiation
Abstract
4.1 Introduction
4.2 Background
4.3 Diamond photonics fabrication
4.4 Graphitic modifications in diamond
4.5 Deterministic placement of color centers
4.6 Quantum technology devices in diamond
4.7 Conclusions and outlook
References
Chapter 5 Ab initio simulations of color centers in diamond
Abstract
5.1 Introduction
5.2 Ab initio and first principles modeling
5.3 Color-centers in diamond
5.4 Outlook
References
Chapter 6 Color centers in diamond for quantum photonics
Abstract
6.1 Introduction
6.2 Engineering of color centers
6.3 Optically active diamond defects
6.4 Nitrogen-vacancy color center in diamond
6.5 Group-IV defects in diamond
6.6 Some other defects
6.7 Conclusion
References
Chapter 7 Diamond spin–photon interface
Abstract
7.1 Key ingredients: what makes a good spin–photon interface?
7.2 The interface
7.3 Optical properties
7.4 Spin properties and spin control
7.5 Protocols and demonstrations
7.6 Experimental considerations
7.7 Outlook
References
Chapter 8 Diamond integrated quantum photonics
Abstract
8.1 Introduction
8.2 Single-photon emitters coupled to diamond nanophotonic structures
8.3 Integrated single-photon detectors on diamond
8.4 Manipulation of single photons and light in diamond
8.5 Conclusions and outlook
References
Chapter 9 Diamond color centers for enhanced quantum sensing
Abstract
9.1 How to build a quantum sensor?
9.2 Sensing protocols
9.3 Nitrogen-vacancy-diamond sensors
9.4 Outlook
References
Chapter 10 Fluorescent nanodiamonds
Abstract
10.1 Introduction
10.2 Production of nanodiamonds
10.3 Color centers in nanodiamonds
10.4 Photonics integration
10.5 Summary
References
Chapter 11 Diamond single photon source for metrology: focus on radiometry and imaging
Abstract
11.1 Introduction
11.2 Single-photon sources
11.3 Experimental schemes
11.4 Metrological characterization of solid-state single-photon source
11.5 Quantum radiometry with single-photon sources
11.6 Summary
Acknowledgments
References
Chapter 12 Diamond laser threshold magnetometer
Abstract
12.1 Introduction
12.2 Laser threshold magnetometer with microwave-driven NV spins
12.3 Experimental progress towards the realization of a laser threshold magnetometer
12.4 Summary and outlook
Acknowledgment
References
Chapter 13 Silicon carbide growth and properties for quantum technologies
Abstract
13.1 Properties of silicon carbide and their impact on growth processes
13.2 Manufacturing processes of silicon carbide
13.3 SiC heterosubstrates
13.4 Effects of post-growth processing on the intrinsic point defects content
13.5 Surface passivation
13.6 Isotope control of SiC substrates
References
Chapter 14 Color centers in silicon carbide
Abstract
14.1 Introduction
14.2 Characteristics of color centers
14.3 Theoretical investigation of color centers
14.4 Silicon carbide: material and properties
14.5 Color centers in SiC
14.6 Summary and outlook
References
Chapter 15 Defect engineering and charge state control of color centers in silicon carbide
Abstract
15.1 Introduction
15.2 Dominant intrinsic defects and impurities in as-grown SiC
15.3 Charge state control of color centers
15.4 Summary
Acknowledgments
References
Chapter 16 Silicon carbide spin–photon interface
Abstract
16.1 Purpose of spin–photon interfaces
16.2 Generic working principles of color centers in the perspective of spin–photon interfaces
16.3 Tools and measurements to infer the dynamics of spin–photon interfaces
16.4 Currently investigated SiC color centers with spin–photon interfaces
16.5 Coherent SiC spin–photon interfaces for interference experiments
16.6 Improving SiC spin–photon interfaces
16.7 Potential spin–photon interface schemes
References
Chapter 17 Silicon carbide photonics technologies and fabrication methods
Abstract
17.1 Introduction
17.2 Photonic crystal cavities: design and fabrication
17.3 Photoelectrochemical etching for optically isolation
17.4 Engineering defect placement in nanophotonics
References
Chapter 18 Nonlinear photonics in silicon carbide
Abstract
18.1 Introduction of nonlinearity in silicon carbide
18.2 Nonlinearity in 4H-SiCOI
18.3 Nonlinear photonics in amorphous SiC
18.4 Summary
Acknowledgment
Table of symbols
References
Chapter 19 Electrically driven quantum emitters in diamond and silicon carbide
Abstract
19.1 Introduction
19.2 Past and current results
19.3 Theory of color center electroluminescence
19.4 Device fabrication
19.5 Device operation
19.6 Conclusion and outlook
Acknowledgments
References
Chapter 20 Spin defects in silicon carbide for maser applications
Abstract
20.1 Introduction
20.2 Maser fundamentals
20.3 Experimental journey towards a SiC maser
20.4 Maser realization
Acknowledgement
References
Chapter 21 Conclusions and outlook
Abstract
21.1 Introduction
21.2 Key developments and challenges
21.3 Outlook
References
Index

Mario Agio

Mario Agio studied physics at the University of Pavia, Italy, and Iowa State University, USA, and graduated in 2003 with a thesis on the fundamentals and applications of semiconductor-based photonic crystals. In 2004 he joined the Nano-Optics Group of Prof. Vahid Sandoghdar at ETH Zurich, where his research interests have broadened to single-molecule spectroscopy, near-field optics, and quantum optics. He was awarded the Prize of the Italian Physical Society for graduate students (2002) and the Latsis Prize of ETH Zurich (2010) for his accomplishments in nano optics. In 2011 he received the Habilitation in Physical Chemistry from ETH Zurich, where he has been Privat Dozent until 2016. From 2012 to 2015, he was with the National Institute of Optics (CNR-INO) and the European Laboratory for Nonlinear Spectroscopy (LENS) in Florence, Italy. Since April 2015 he is responsible for the Laboratory of Nano-Optics at the University of Siegen, Germany, and since April 2021 he also holds a part-time appointment with CNR-INO.

Affiliations and expertise

Professor, Laboratory of Nano-Optics, University of Siegen, Germany; European Laboratory for Nonlinear Spectroscopy (LENS), via Nello Carrara 1, 50019 Sesto Fiorentino, Italy; National Institute of Optics (CNR-INO), Florence, Italy

Stefania Castelletto

Stefania Castelletto is associate professor and deputy associate dean in the School of Engineering at the Royal Melbourne Institute of Technology University in Melbourne, Australia. She holds a Dottorato di Ricerca (PhD equivalent) from the School of Engineering at the Polytechnic of Turin (Italy) and she has a habilitation as Professor of Experimental and Applied Physics from the Italian Ministry of Education and Research. Before her current academic appointment, she covered various research positions as Senior Fellow at Macquarie University (Sydney), Swinburne University of Technology (Melbourne) and The University of Melbourne. She was part of an Australian Research Council Centre of Excellence for engineered quantum systems. Earlier in her career, she was group leader at the Italian National Metrology Research Centre (INRIM) and responsible for the research and development of quantum technologies based on non-classical states of light, such as quantum cryptography and quantum imaging. She has been visiting scientist at the National Institute of Technology and Standards (USA) for two years. Her recent research focus is on color centers in diamond and silicon carbide for applications in quantum sensing, single photon sources and super-resolution imaging.

Affiliations and expertise

Associate Professor, RMIT University, Mechanical and Automotive Engineering, Australia

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