
Nanolithography and Surface Microscopy with Electron Beams
- 1st Edition, Volume 231 - October 25, 2024
- Imprint: Academic Press
- Editors: Peter W. Hawkes, Martin Hÿtch
- Language: English
- Hardback ISBN:9 7 8 - 0 - 4 4 3 - 3 1 4 6 2 - 9
- eBook ISBN:9 7 8 - 0 - 4 4 3 - 3 1 4 6 3 - 6
Nanolithography and Surface Microscopy with Electron Beams, Volume 231 merges two long-running serials, Advances in Electronics and Electron Physics and Advances in Optical a… Read more

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Request a sales quoteNanolithography and Surface Microscopy with Electron Beams, Volume 231 merges two long-running serials, Advances in Electronics and Electron Physics and Advances in Optical and Electron Microscopy. The series features articles on the physics of electron devices (especially semiconductor devices), particle optics at high and low energies, microlithography, image science, digital image processing, electromagnetic wave propagation, electron microscopy, and the computing methods used in all these domains. Specific chapters cover Introduction to inverse problems in electron microscopy, Directional sinogram inpainting for limited angle tomography, Strain tomography of crystals, FISTA with adaptive discretization, Total variation discretization, and Reconstruction with a Gaussian Dictionary.
- Provides the authority and expertise of leading contributors from an international board of authors
- Presents the latest release in the Advances in Imaging and Electron Physics series
Physicists, electrical engineers, applied mathematicians in all branches of image processing and microscopy as well as electron physics in general
- Nanolithography and Surface Microscopy with Electron Beams
- Cover image
- Title page
- Table of Contents
- Series Page
- Copyright
- Preface
- Author's preface
- Chapter One Early life
- Abstract
- Keywords
- Geelong Grammar School
- Melbourne University
- Chapter Two SEM/ion beam system for examining ion etched surfaces
- Abstract
- Keywords
- Summary of the final lens specifications
- Theoretical estimation of beam diameter
- Mass filter for the ion beam
- Electrostatic quadrupole filter
- Magnetic deflection filter
- Shape of the magnetic deflecting field
- Performance of the magnetic deflection filter
- References
- Chapter Three SEM examination of ion-etched metal and semiconductor crystals
- Abstract
- Keywords
- Introduction
- Formation of cones underneath particles of shielding material on the surface of ion-etched samples
- Introduction
- Results
- Interpretation of results
- Ion etching of mechanically distorted aluminum crystals
- Introduction
- Experimental results
- Summary and interpretation of results
- Formation of ridges on the surface of ion-etched crystalline metal specimens
- Introduction
- Experimental results
- Summary and conclusions
- Oxidation
- Contamination
- Back-sputtered material
- Ion etching of silicon
- Introduction
- Experimental results
- Conclusions
- References
- Chapter Four Microfabrication in an SEM
- Abstract
- Keywords
- Micro-machining by ion etching through a mask of electron beam written contamination (Broers, 1964)
- Micromachining by ion etching through a mask of electron beam exposed KPR photoresist (Broers, 1965a,b)
- Summary of electron beam fabrication and recording techniques in 1964
- Thermal processes
- Electron beam-induced processes
- Comparison of techniques for micro-machining
- Ph.D. Oral Examination
- References
- Chapter Five My move to IBM and research on long-life cathodes
- Abstract
- Keywords
- IBM Thomas J Watson research laboratory
- Long-life tungsten cathodes for use in electron beam memory systems
- Choice of cathode type
- Experimental arrangement for measuring brightness
- Rod cathode
- Rod cathode experimental results
- The cone cathode
- Cone cathode experimental results
- Long-life tungsten cathodes: Conclusions
- Lanthanum hexaboride cathodes
- References
- Further reading
- Chapter Six LaB6 cathode high-resolution electron probe and its application to microfabrication and surface microscopy
- Abstract
- Keywords
- Theoretical electron optical performance
- LaB6 electron gun
- LaB6 material quality
- Electron beam column
- Vacuum system
- Vibration isolation
- Electronics
- Experimental performance
- Measurement of the ultimate resolution of the surface scanning electron microscopy using the Everhart/Thornley secondary electron detector
- Routine surface scanning electron microscopy
- Microfabrication probe used for making prototype silicon circuits
- Microfabrication in the new SEM
- Acoustic surface wave transducers
- Thin window substrate
- Scanning electron microscopy of biological samples
- Red blood cells
- Human marrow
- Mineralized tissue
- References
- Chapter Seven Illumination systems and cathodes for electron probes and the design of a short focal length final lens electron probe
- Abstract
- Keywords
- Illumination systems (Broers, 1979)
- Comparison of thermal and field emission cathodes (Broers, 1972)
- Cold field emission
- High brightness electron gun using a field emission gun
- Field emission gun and lens
- Thermal electron sources
- Microfabrication
- The decision to use LaB6 Schottky cathode in the new high-resolution electron probe
- Short focal length LaB6 cathode electron probe
- Electron gun
- Standard mode—Cross-over as the object for electron optical column
- Kohler illumination
- Measurement of brightness
- References
- Chapter Eight Performance of the high resolution short focal length final lens electron probe and low-loss surface scanning electron microscopy
- Abstract
- Keywords
- Probe performance
- Resolution limit and contamination
- Surface microscopy with low-loss scattered electron
- Low-loss scanning electron microscopy of biological specimens
- Sample coating
- Sample staining
- Preparation and examination of 3C and T4 Bacteriophage
- Low-loss imaging of bacterial virus T7
- Results
- Discussion
- Conclusions
- References
- Further reading
- Chapter Nine Microfabrication in the STEM
- Abstract
- Keywords
- Measurement of the resolution of PMMA
- Conclusions
- Measurement of the resolution contrast function for PMMA as an electron resist
- Sample preparation
- Exposure
- Determination of exposure distribution for thin resist on a thin window substrate
- Contrast for an array of infinitely long parallel lines
- Exposure distribution for solid substrates and thick resist layers
- Normalized aperture exposure
- Contrast and resolution for optical exposure
- Contrast for optical and electron beam exposure
- Direct fabrication with electron beams
- Exposure of multi-layer Langmuir–Blodgett films
- Experimental methods
- Experimental results
- Discussion
- Radiation damage lithography
- References
- Chapter Ten Nano-devices fabricated with the short focal length electron probe
- Abstract
- Keywords
- Josephson Effect in Nb Bridges
- Ratio of Superconducting Transition Temperatures in Granular Nb Films (Laibowitz et al., 1980)
- Quasiparticle charge-diffusion length in amorphous Re-W wires
- Nanobridge SQUIDS
- Observation of h/e Aharonov-Bohm Interference effects in submicron diameter, normal metal rings
- Ring fabrication
- Results and discussion
- Conclusions
- References
- Chapter Eleven Semiconductor lithography and processing in the 1980s and 1990s
- Abstract
- Keywords
- Semiconductor technology in 1980
- Lithography in 1980
- Optical lithography
- Scanning mirror cameras
- Step and repeat cameras
- Electron beam lithography
- Throughput limits for electron beam lithography
- X-ray lithography
- Electron storage ring
- Resolution of X-ray lithography
- Other lithography exposure methods being worked on in 1980
- The future
- References
- Further reading
- Chapter Twelve Nanolithography at 350 kV
- Abstract
- Keywords
- Teaching and research at Cambridge 1984–1996
- JEOL 4000 EX electron microscope
- Projection TEM vs STEM
- Measurement of the resolution of PMMA
- Lift-off patterning with PMMA
- Contamination-resist
- Methods for manipulating resist processes to make sub-10 nm structures
- Discussion
- Direct exposure of SiO2 on bulk substrates
- Experiments
- Direct exposure of SiO2 on membrane substrates
- Simulation of exposure profiles
- Replication of SiO2 trenches into polycrystalline and single-crystal silicon
- Use of deposited SiO2 as a resist (Pan et al., 1991)
- Mechanism of the direct exposure of SiO2
- Use of patterned SiO2 as a template
- Device applications
- References
- Chapter Thirteen Nanolithography for modulation doped field effect transistors
- Abstract
- Keywords
- Introduction
- The scaling of high electron mobility transistors HEMTs
- Normally conducting gates
- Superconducting gates
- Experimental results
- Device fabrication
- DC characteristics
- Microwave characteristics
- Summary and conclusions
- References
- Epilogue
- EUV lithography
- Electron beam lithography
- Multibeam electron beam masks writers
- Thermal field and Schottky emission cathodes
- Limited-area cathodes
- Ultimate resolution of optical, electron beam, and X-ray lithographies
- References
- Index
- Edition: 1
- Volume: 231
- Published: October 25, 2024
- No. of pages (Hardback): 406
- No. of pages (eBook): 232
- Imprint: Academic Press
- Language: English
- Hardback ISBN: 9780443314629
- eBook ISBN: 9780443314636
PH
Peter W. Hawkes
Peter Hawkes obtained his M.A. and Ph.D (and later, Sc.D.) from the University of Cambridge, where he subsequently held Fellowships of Peterhouse and of Churchill College. From 1959 – 1975, he worked in the electron microscope section of the Cavendish Laboratory in Cambridge, after which he joined the CNRS Laboratory of Electron Optics in Toulouse, of which he was Director in 1987. He was Founder-President of the European Microscopy Society and is a Fellow of the Microscopy and Optical Societies of America. He is a member of the editorial boards of several microscopy journals and serial editor of Advances in Electron Optics.
Affiliations and expertise
Founder-President of the European Microscopy Society and Fellow, Microscopy and Optical Societies of America; member of the editorial boards of several microscopy journals and Serial Editor, Advances in Electron Optics, FranceMH
Martin Hÿtch
Dr Martin Hÿtch, serial editor for the book series “Advances in Imaging and Electron Physics (AIEP)”, is a senior scientist at the French National Centre for Research (CNRS) in Toulouse. He moved to France after receiving his PhD from the University of Cambridge in 1991 on “Quantitative high-resolution transmission electron microscopy (HRTEM)”, joining the CNRS in Paris as permanent staff member in 1995. His research focuses on the development of quantitative electron microscopy techniques for materials science applications. He is notably the inventor of Geometric Phase Analysis (GPA) and Dark-Field Electron Holography (DFEH), two techniques for the measurement of strain at the nanoscale. Since moving to the CEMES-CNRS in Toulouse in 2004, he has been working on aberration-corrected HRTEM and electron holography for the study of electronic devices, nanocrystals and ferroelectrics. He was laureate of the prestigious European Microscopy Award for Physical Sciences of the European Microscopy Society in 2008. To date he has published 130 papers in international journals, filed 6 patents and has given over 70 invited talks at international conferences and workshops.
Affiliations and expertise
Senior Scientist, French National Centre for Research (CNRS), Toulouse, FranceRead Nanolithography and Surface Microscopy with Electron Beams on ScienceDirect