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Metal Oxides for Non-volatile Memory

Materials, Technology and Applications

1st Edition - March 1, 2022

Editors: Panagiotis Dimitrakis, Ilia Valov, Stefan Tappertzhofen

Paperback ISBN:

9 7 8 - 0 - 1 2 - 8 1 4 6 2 9 - 3

eBook ISBN:

9 7 8 - 0 - 1 2 - 8 1 4 6 3 0 - 9

Metal Oxides for Non-volatile Memory: Materials, Technology and Applications covers the technology and applications of metal oxides (MOx) in non-volatile memory (NVM) technology.… Read more

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Metal Oxides for Non-volatile Memory: Materials, Technology and Applications covers the technology and applications of metal oxides (MOx) in non-volatile memory (NVM) technology. The book addresses all types of NVMs, including floating-gate memories, 3-D memories, charge-trapping memories, quantum-dot memories, resistance switching memories and memristors, Mott memories and transparent memories. Applications of MOx in DRAM technology where they play a crucial role to the DRAM evolution are also addressed. The book offers a broad scope, encompassing discussions of materials properties, deposition methods, design and fabrication, and circuit and system level applications of metal oxides to non-volatile memory.

Finally, the book addresses one of the most promising materials that may lead to a solution to the challenges in chip size and capacity for memory technologies, particular for mobile applications and embedded systems.

Cover
Title page
Table of Contents
Copyright
Contributors
Series editor biography
Preface to the series
Chapter 1: Introduction to non-volatile memory
Abstract
Acknowledgements
1.1: Introduction and history
1.2: Flash non-volatile memory
1.3: Novel concepts for non-volatile memories
Chapter 2: Resistive switching in metal-oxide memristive materials and devices
Abstract
Acknowledgments
2.1: Mechanisms of resistive switching in metal-oxide memristive materials and devices
2.2: Local analysis of resistive switching of anionic type
2.3: Multiscale simulation of resistive switching in metal-oxide memristive devices
2.4: Conclusions
Chapter 3: Charge trapping NVMs with metal oxides in the memory stack
Abstract
3.1: Introduction
3.2: History of charge trap memory devices
3.3: SONOS memory devices
3.4: CT memory cell reliability
3.5: New materials for charge trap memory stack—Metal oxides
Chapter 4: Technology and neuromorphic functionality of magnetron-sputtered memristive devices
Abstract
Acknowledgments
4.1: Features of magnetron sputtering
4.2: Performances and reproducibility of memristive devices
4.3: Functionality of memristors as elements for neuromorphic systems
4.4: Conclusions
Chapter 5: Metalorganic chemical vapor deposition of aluminum oxides: A paradigm on the process-structure-properties relationship
Abstract
Acknowledgements
5.1: Introduction
5.2: Process kinetic modeling and simulation of the MOCVD of metal oxides: The case of Al2O3 films
5.3: Local coordination affects properties: The case of amorphous Al2O3 barrier coatings
5.4: Concluding remarks
Chapter 6: MOx materials by ALD method
Abstract
6.1: Introduction
6.2: ALD fundamentals
6.3: ALD of oxides for memory devices
6.4: Conclusions
Chapter 7: Nano-composite MOx materials for NVMs
Abstract
Acknowledgments
7.1: Introduction
7.2: Experimental
7.3: Conclusion
Chapter 8: MOx in ferroelectric memories
Abstract
8.1: Introduction
8.2: Ferroelectricity—A material property
8.3: Negative capacitance in ferroelectrics
8.4: Ferroelectricity in hafnium oxide
8.5: Ferroelectric memories
8.6: Summary and future prospects
Chapter 9: “Metal oxides in magnetic memories”: Current status and future perspectives
Abstract
9.1: Introduction
9.2: Magnetic random access memory (MRAM)
9.3: Metal oxides in MRAMs
9.4: Perspectives
Chapter 10: Correlated transition metal oxides and chalcogenides for Mott memories and neuromorphic applications
Abstract
10.1: Introduction
10.2: Mott insulators and Mott transitions
10.3: Electric Mott transitions
10.4: Electric Mott transition by dielectric breakdown: Detailed mechanism
10.5: Microelectronic applications of Mott insulators: Toward Mottronics
10.6: Conclusion
Chapter 11: The effect of external stimuli on the performance of memristive oxides
Abstract
11.1: Introduction
11.2: Electrical field
11.3: Magnetic field
11.4: Thermochemical treatments
11.5: Strain
11.6: Radiation
11.7: Outlook
Chapter 12: Nonvolatile MOX RRAM assisted by graphene and 2D materials
Abstract
12.1: MOX RRAM with graphene-based electrodes
12.2: Modulating ion migration in MOX RRAM by 2D materials
12.3: MOX RRAM assisted by additional 2D intercalation layer
12.4: Conclusion
Chapter 13: Ubiquitous memristors on-chip in multi-level memory, in-memory computing, data converters, clock generation and signal transmission
Abstract
Acknowledgment
13.1: Introduction
13.2: Multi-level memory and in-memory arithmetic structures
13.3: ADC and DAC in-memory data converters
13.4: Memristor-based clock signal generators
13.5: Metastable memristive transmission lines
13.6: Conclusions
Chapter 14: Neuromorphic applications using MOx-based memristors
Abstract
14.1: Introduction on neuromorphic computing
14.2: Recap of MOx-based memristor technology
14.3: Advanced memristor functionalities useful for neuromorphic applications
14.4: Overview of neuromorphic concepts and system prototypes
14.5: Conclusions and outlook
Index