Laser Annealing Processes in Semiconductor Technology
Theory, Modeling and Applications in Nanoelectronics
- 1st Edition - April 21, 2021
- Imprint: Woodhead Publishing
- Editors: Fuccio Cristiano, Antonino La Magna
- Language: English
- Paperback ISBN:9 7 8 - 0 - 1 2 - 8 2 0 2 5 5 - 5
- eBook ISBN:9 7 8 - 0 - 1 2 - 8 2 0 2 5 6 - 2
Laser Annealing Processes in Semiconductor Technology: Theory, Modeling and Applications in Nanoelectronics synthesizes the scientific and technological advances of laser anneal… Read more
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Request a sales quoteLaser Annealing Processes in Semiconductor Technology: Theory, Modeling and Applications in Nanoelectronics synthesizes the scientific and technological advances of laser annealing processes for current and emerging nanotechnologies. The book provides an overview of the laser-matter interactions of materials and recent advances in modeling of laser-related phenomena, with the bulk of the book focusing on current and emerging (beyond-CMOS) applications. Reviewed applications include laser annealing of CMOS, group IV semiconductors, superconducting materials, photonic materials, 2D materials. This comprehensive book is ideal for post-graduate students, new entrants, and experienced researchers in academia, research and development in materials science, physics and engineering.
- Introduces the fundamentals of laser materials and device fabrication methods, including laser-matter interactions and laser-related phenomena
- Addresses advances in physical modeling and in predictive simulations of laser annealing processes such as atomistic modeling and TCAD simulations
- Reviews current and emerging applications of laser annealing processes such as CMOS technology and group IV semiconductors
Materials Scientists and Engineers
- Cover image
- Title page
- Table of Contents
- Copyright
- Contributors
- Preface
- Chapter 1: Historical evolution of pulsed laser annealing for semiconductor processing
- Abstract
- 1.1: Section 1: Introduction
- 1.2: Section 2: Excimer laser technology
- 1.3: Section 3: Excimer laser annealing for low-temperature polycrystalline silicon technology
- 1.4: Section 4: Excimer laser annealing in MOS technology
- 1.5: Conclusions
- Chapter 2: Laser-matter interactions
- Abstract
- 2.1: Introduction
- 2.2: Absorption of electromagnetic radiation
- 2.3: Thermal effects of laser radiation
- 2.4: Differences across the electromagnetic spectrum
- 2.5: Diffusion model extension to millisecond regime
- 2.6: Concluding remarks
- Chapter 3: Atomistic modeling of laser-related phenomena
- Abstract
- 3.1: Introduction
- 3.2: Atomistic simulation techniques
- 3.3: Laser annealing modeling from an atomistic perspective
- 3.4: Laser-related phenomena in semiconductors
- 3.5: Conclusions
- Chapter 4: Laser annealing applications for semiconductor devices manufacturing
- Abstract
- 4.1: Introduction
- 4.2: Power devices
- 4.3: CMOS logic and 3D integration
- 4.4: Memory
- 4.5: Conclusion
- Chapter 5: Materials science issues related to the fabrication of highly doped junctions by laser annealing of Group IV semiconductors
- Abstract
- 5.1: Introduction
- 5.2: Structural investigations
- 5.3: Dopant redistribution and activation in Si
- 5.4: Dopant redistribution and activation in Ge
- 5.5: Conclusion
- Chapter 6: Continuum modeling and TCAD simulations of laser-related phenomena in CMOS applications
- Abstract
- 6.1: Introduction: Complexity and multiple time and space scales in the simulation of irradiation processing
- 6.2: Computation of the energy transfer between laser and matter
- 6.3: Laser annealing TCAD simulation: Nonmelting processes
- 6.4: Laser annealing TCAD simulation: Melting processes
- 6.5: Complex phenomena and advanced simulations
- 6.6: Conclusion and future perspectives
- Chapter 7: Laser engineering of carbon materials for optoelectronic applications
- Abstract
- 7.1: Optoelectronic and display devices: State of the art
- 7.2: Introduction to carbon in electronics
- 7.3: Laser engineering of carbon materials
- 7.4: Conclusion and perspectives
- Chapter 8: Optical hyperdoping
- Abstract
- 8.1: Introduction
- 8.2: Historic overview
- 8.3: Implantation and pulsed laser melting of transition metals in Si
- 8.4: Recent electrical and defect measurements
- 8.5: Ge and GeSn
- 8.6: Conclusion
- Chapter 9: Laser ultra-doped silicon: Superconductivity and applications
- Abstract
- Acknowledgments
- 9.1: Introduction
- 9.2: Laser-doped superconducting silicon: Gas immersion laser doping
- 9.3: Silicon: A BCS superconductor tunable with doping
- 9.4: All-silicon superconducting devices
- 9.5: Toward large-scale applications: Laser-annealed superconducting layers on SOI
- 9.6: Superconducting silicon by PLIE in industrial conditions
- 9.7: Conclusions
- Index
- Edition: 1
- Published: April 21, 2021
- Imprint: Woodhead Publishing
- No. of pages: 426
- Language: English
- Paperback ISBN: 9780128202555
- eBook ISBN: 9780128202562
FC
Fuccio Cristiano
Fuccio Cristiano received his Ph.D. degree from the University of Surrey, U.K., in 1998. From 1998 to 2000, he worked in the CEMES/CNRS laboratory of Toulouse, France. In 2000, he joined the LAAS/CNRS laboratory of Toulouse, where he has managed the research team “Materials and Processes for Nanoelectronics” from 2012 to 2016.
His research interests concern the investigation of advanced doping techniques in semiconductors (with special focus on ultra-rapid thermal processes) and the impact of process-related defects on dopant activation anomalies. He has authored or coauthored about 130 papers in scientific journals and has given several invited presentations on Ion beam induced defects in silicon.
Affiliations and expertise
LAAS-CNRS Toulouse, FranceAL
Antonino La Magna
Antonino La Magna received his master’s in physics (cum laude) and his Ph.D. in Physics at the University of Catania in1992 and 1996, respectively. Since 1999, he has been a member of the permanent staff at the Institute for the Microelectronics and Microsystems of the Italian National Council of Research (CNR-IMM), where he is responsible of the computational team and resources (1999-Today). Currently, he also leads the research group on advanced processes (2010-Today). He is and has been coordinator and responsible for the CNR-IMM of several international projects and contract research on behalf of industry.
He has authored over more than 270 publications in international journals in the fields of theoretical solid state physics, technological processes and process and device simulations, and he is a frequently invited speaker at international conferences.
Affiliations and expertise
Consiglio Nazionale delle Ricerche (CNR), ItalyRead Laser Annealing Processes in Semiconductor Technology on ScienceDirect