List of Contributors
Preface
Chapter 1. Introduction
I. Directed Energy Processing of Semiconductors
II. Energy Deposition and Heat Flow
III. Interfaces and Surfaces
IV. Epitaxy and Alloying
V. Surface Crystallization and Alloying—Perspectives
List of Symbols
Chapter 2. Crystallization Processes
I. Introduction
II. Concepts of Crystal Growth
III. Concepts of Nucleation
IV. Phase Transformations of Elemental Silicon
V. Nonequilibrium Impurity Incorporation during Crystal Growth
List of Symbols
References
Chapter 3. Fundamentals of Energy Deposition
I. Introduction
II. Laser Beams
III. Electron Beams
IV. Heating by Laser and Electron Beams
V. Conclusions
References
Chapter 4. Heat Flow Calculations
I. Introduction
II. The Mathematical Problem
III. The Role of the Absorption Coefficient
IV. Amorphous Silicon
V. Liquid-Solid Interface Velocity
VI. Other Semiconductors
VII. Impurity Redistribution
VIII. Continuum Lasers
Appendix A. Heat Transport
Appendix B. Mass Transport
List of Symbols
References
Chapter 5. Supersaturated Alloys, Solute Trapping, and Zone Refining
I. Introduction
II. Experimental Approach
III. Model Calculations for Dopant Redistribution
IV. Results
V. Conclusions
References
Chapter 6. Microstructure and Topography
I. Introduction
II. Annealing of Ion-Implanted Semiconductors
III. Annealing of Metal Films on Semiconductors
IV. Annealing of Other Semiconductors Layers
References
Chapter 7. Epitaxy by Pulsed Annealing of Ion-Implanted Silicon
I. Introduction
II. Phase Transitions Induced by Laser or Electron Beam Pulses
III. Coupling of the Incident Beam with the Matrix
IV. Defects in Pulsed Annealing of Disordered Layers
V. Amorphous-to-Liquid Transition: Undercooling Effects
References
Chapter 8. Epitaxy of Deposited Si
I. Introduction
II. Homoepitaxy
III. Heteroepitaxy
IV. Lateral Si Epitaxy on Amorphous Substrates
V. Explosive Crystallization
References
Chapter 9. Surface Properties of Laser-Annealed Semiconductors
I. Introduction
II. Experimental Approach
III. Preparation of Atomically Clean Surfaces
IV. Surface Structure of Laser-Annealed, Single-Crystal Semiconductor Surfaces
V. Surface Characterization of Ion-Implanted, Laser-Annealed Silicon
VI. Conclusions
References
Chapter 10. Solid Phase Regrowth
I. Solid Phase Regrowth and Diffusion Processes
II. Temperature Distributions and Solid Phase Reaction Rates Induced by a Scanning cw Laser
III. Experimental Analysis of cw Beam-Processed Semiconductor Materials
IV. Dopant Incorporation and Metastable Phases
V. Future Directions
References
Chapter 11. Compound Semiconductors
I. Introduction
II. Ion-Implanted Layers: Solid Phase Regrowth
III. Ion-Implanted Layers: Liquid Phase Regrowth
IV. GaAs Contacts and Deposited Layers
V. Other Compound Semiconductors
VI. Summary and Conclusions
References
Chapter 12. Suicides and Metastable Phases
I. Introduction
II. Solid State Reactions—Suicide Formation
III. Melting, Mixing, and Quenching
IV. Experimental Results
References
Chapter 13. Factors Influencing Applications
I. Introduction
II. Modes of Beam Processing
III. Changes in Materials Parameters
IV. Control of the Heat Treatment Process
V. Processing Single-Phase Structures
VI. Processing Multiphase Structures
VII. Processing Large Areas
References
Index