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III-Nitride Electronic Devices

1st Edition, Volume 102 - October 18, 2019

Editors: Rongming Chu, Keisuke Shinohara

Language: English
Hardback ISBN:
9 7 8 - 0 - 1 2 - 8 1 7 5 4 4 - 6
eBook ISBN:
9 7 8 - 0 - 1 2 - 8 1 7 5 4 5 - 3

III-Nitride Electronic Devices, Volume 102, emphasizes two major technical areas advanced by this technology: radio frequency (RF) and power electronics applications. The range of… Read more

III-Nitride Electronic Devices

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III-Nitride Electronic Devices, Volume 102, emphasizes two major technical areas advanced by this technology: radio frequency (RF) and power electronics applications. The range of topics covered by this book provides a basic understanding of materials, devices, circuits and applications while showing the future directions of this technology. Specific chapters cover Electronic properties of III-nitride materials and basics of III-nitride HEMT, Epitaxial growth of III-nitride electronic devices, III-nitride microwave power transistors, III-nitride millimeter wave transistors, III-nitride lateral transistor power switch, III-nitride vertical devices, Physics-Based Modeling, Thermal management in III-nitride HEMT, RF/Microwave applications of III-nitride transistor/wireless power transfer, and more.