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Handbook of Crystal Growth
Bulk Crystal Growth
- 2nd Edition, Volume 2A-2B - November 4, 2014
- Editor: Peter Rudolph
- Language: English
- Hardback ISBN:9 7 8 - 0 - 4 4 4 - 6 3 3 0 3 - 3
- eBook ISBN:9 7 8 - 0 - 4 4 4 - 6 3 3 0 6 - 4
Vol 2A: Basic TechnologiesHandbook of Crystal Growth, Second Edition Volume IIA (Basic Technologies) presents basic growth technologies and modern crystal cutting methods. Parti… Read more
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Handbook of Crystal Growth, Second Edition Volume IIA (Basic Technologies) presents basic growth technologies and modern crystal cutting methods. Particularly, the methodical fundamentals and development of technology in the field of bulk crystallization on both industrial and research scales are explored. After an introductory chapter on the formation of minerals, ruling historically the basic crystal formation parameters, advanced basic technologies from melt, solution, and vapour being applied for research and production of the today most important materials, like silicon, semiconductor compounds and oxides are presented in detail. The interdisciplinary and general importance of crystal growth for human live are illustrated.
Vol 2B: Growth Mechanisms and Dynamics
Handbook of Crystal Growth, Second Edition Volume IIB (Growth Mechanisms and Dynamics) deals with characteristic mechanisms and dynamics accompanying each bulk crystal growth method discussed in Volume IIA. Before the atoms or molecules pass over from a position in the fluid medium (gas, melt or solution) to their place in the crystalline face they must be transported in the fluid over macroscopic distances by diffusion, buoyancy-driven convection, surface-tension-driven convection, and forced convection (rotation, acceleration, vibration, magnetic mixing). Further, the heat of fusion and the part carried by the species on their way to the crystal by conductive and convective transport must be dissipated in the solid phase by well-organized thermal conduction and radiation to maintain a stable propagating interface. Additionally, segregation and capillary phenomena play a decisional role for chemical composition and crystal shaping, respectively. Today, the increase of high-quality crystal yield, its size enlargement and reproducibility are imperative conditions to match the strong economy.
Handbook of Crystal Growth, Second Edition Volume IIA (Basic Technologies) presents basic growth technologies and modern crystal cutting methods. Particularly, the methodical fundamentals and development of technology in the field of bulk crystallization on both industrial and research scales are explored. After an introductory chapter on the formation of minerals, ruling historically the basic crystal formation parameters, advanced basic technologies from melt, solution, and vapour being applied for research and production of the today most important materials, like silicon, semiconductor compounds and oxides are presented in detail. The interdisciplinary and general importance of crystal growth for human live are illustrated.
Vol 2B: Growth Mechanisms and Dynamics
Handbook of Crystal Growth, Second Edition Volume IIB (Growth Mechanisms and Dynamics) deals with characteristic mechanisms and dynamics accompanying each bulk crystal growth method discussed in Volume IIA. Before the atoms or molecules pass over from a position in the fluid medium (gas, melt or solution) to their place in the crystalline face they must be transported in the fluid over macroscopic distances by diffusion, buoyancy-driven convection, surface-tension-driven convection, and forced convection (rotation, acceleration, vibration, magnetic mixing). Further, the heat of fusion and the part carried by the species on their way to the crystal by conductive and convective transport must be dissipated in the solid phase by well-organized thermal conduction and radiation to maintain a stable propagating interface. Additionally, segregation and capillary phenomena play a decisional role for chemical composition and crystal shaping, respectively. Today, the increase of high-quality crystal yield, its size enlargement and reproducibility are imperative conditions to match the strong economy.
Volume 2A
- Presents the status and future of Czochralski and float zone growth of dislocation-free silicon
- Examines directional solidification of silicon ingots for photovoltaics, vertical gradient freeze of GaAs, CdTe for HF electronics and IR imaging as well as antiferromagnetic compounds and super alloys for turbine blades
- Focuses on growth of dielectric and conducting oxide crystals for lasers and non-linear optics
- Topics on hydrothermal, flux and vapour phase growth of III-nitrides, silicon carbide and diamond are explored
Volume 2B
- Explores capillarity control of the crystal shape at the growth from the melt
- Highlights modeling of heat and mass transport dynamics
- Discusses control of convective melt processes by magnetic fields and vibration measures
- Includes imperative information on the segregation phenomenon and validation of compositional homogeneity
- Examines crystal defect generation mechanisms and their controllability
- Illustrates proper automation modes for ensuring constant crystal growth process
- Exhibits fundamentals of solution growth, gel growth of protein crystals, growth of superconductor materials and mass crystallization for food and pharmaceutical industries
Scientists and engineers from diverse (academic/industrial) backgrounds including crystal growers, physicists, chemists, engineers, bioengineers, solid state scientists, materials scientists, earth scientists, etc.
General Preface
Preface to Volume II
List of Contributors
Part A. Basic Techniques
1. Crystal Growth in Geology: Patterns on the Rocks
1.1. Introduction
1.2. Geological Scenarios for Crystal Growth
1.3. Deciphering Geological Information from Crystal Morphology
1.4. Decoding Polycrystalline Textures from Nucleation and Growth
1.5. The Case of Giant Crystals
1.6. Decoding Disequilibrium Mineral Patterns
1.7. Early Earth Mineral Growth, Primitive Life Detection, and Origin of Life
1.8. From Deep Earth to Outer Space
2. Czochralski Growth of Silicon Crystals
2.1. Introduction
2.2. Description of the Czochralski Process
2.3. Global Heat Transfer and Convective Flow
2.4. Transport and Incorporation of Dopants and Impurities
2.5. Oxygen in Silicon
2.6. Intrinsic Point Defects and Their Aggregates
2.7. Economic Aspects of Cz Growth
3. Liquid Encapsulation and Related Technologies for the Czochralski Growth of Semiconductor Compounds
3.1. Introduction
3.2. Pressure-Balancing Czochralski Growth
3.3. Growth Constraints to Crystal Quality in LEC and Related Technologies
3.4. Summary
4. Czochralski Growth of Oxides and Fluorides
4.1. Introduction
4.2. Sapphire Single Crystals
4.3. Calcium Fluoride Crystals
4.4. Large Fluoride Crystals
4.5. Scintillator Crystals
4.6. Summary and Outlook
5. Czochralski and Flux Growth of Crystals for Lasers and Nonlinear Optics
5.1. Laser Crystals Grown by the Czochralski Method
5.2. Nonlinear Optical Borate Crystals Grown by the Flux Method
5.3. Conclusion
6. Growth Measures to Achieve Bulk Single Crystals of Transparent Semiconducting and Conducting Oxides
6.1. Introduction
6.2. Basics of TSO Thermodynamics
6.3. Growth Techniques
6.4. Basic Electrical and Optical Properties of Bulk TSO Crystals
6.5. Summary
7. Floating Zone Growth of Silicon
Preface
7.1. Basics of the Floating Zone Silicon Crystal Growth
7.2. Automation of the Floating Zone Process Using Model-Based Control
7.3. Mathematical Modeling of the Floating Zone Silicon Growth
8. Floating Zone Growth of Oxides and Metallic Alloys
8.1. Optical Floating Zone—Complementary Crystal Growth Technique for New Classes of Oxide Materials
8.2. Floating-Zone Single Crystal Growth of Intermetallic Compounds Using a Two-phase RF Inductor
9. Vertical Bridgman Growth of Binary Compound Semiconductors
9.1. Introduction
9.2. Equipment (Design and Engineering Issues)
9.3. Growth of Binary Compound Semiconductors
9.4. Conclusions
10. Multicrystalline Silicon Crystal Growth for Photovoltaic Applications
10.1. Introduction
10.2. Ingot Growth Methods
10.3. Hot-zone Design
10.4. Nucleation and Grain Control
10.5. Conclusions
11. The Unidirectional Crystallization of Metals and Alloys (Turbine Blades)
11.1. Introduction
11.2. DS Castings Manufacturing
11.3. Nickel-based Superalloys and Heat Treatment Process
11.4. Methodology for Manufacture of Ceramic Shell Molds for Directional Solidification Casting
11.5. Investigation Methods for Directional Solidification Castings
11.6. Numerical Modeling of Thermal and Solidification Processes for Directional Solidification Castings
11.7. Summary
12. Crystal Growth by Traveling Heater Method
12.1. Introduction
12.2. Technology
12.3. Versatile THM
12.4. Materials Grown by THM
12.5. Segregation, Purification
12.6. Mass and Heat Transport, Simulation and Modeling
12.7. Single Crystal Growth by THM
12.8. Conclusions
13. Growth of Bulk Nitrides from a Na Flux
13.1. Introduction
13.2. Growth Conditions and Mechanism of the Na Flux Method
13.3. Nucleation Control
13.4. LPE Growth of GaN by the Na Flux Method
13.5. Point Seed and Coalescence Growth Technique
13.6. Summary
14. Hydrothermal Growth of Crystals—Design and Processing
14.1. Introduction
14.2. History of Hydrothermal Growth of Crystals and Current Trends in Hydrothermal Research
14.3. Intelligent Engineering of the Hydrothermal Processes
14.4. Apparatus
14.5. Hydrothermal Processing of Some Selected Crystals
14.6. Hydrothermal Growth of Fine to Nanocrystals
14.7. Conclusions
15. High-Pressure, High-Temperature Solution Growth and Ammonothermal Synthesis of Gallium Nitride Crystals
15.1. Introduction
15.2. High Nitrogen Pressure Solution Growth Method
15.3. Ammonothermal Growth of GaN
15.4. Overall Summary with an Outlook into the Future
16. Vapor Transport Growth of Wide Bandgap Materials
16.1. Introduction
16.2. High Temperature Sublimation Growth of Wide Bandgap Materials (SiC and AlN)
16.3. HVPE of Nitride Semiconductors (AlN, GaN, InN, and Ternary Alloys)
16.4. Conclusion
17. Crystal Growth of Diamond
17.1. Introduction
17.2. High Pressure Crystal Growth of Diamond
17.3. Growth of Diamond from Gas Phase
17.4. Applications
17.5. Conclusions
18. Wafer Processing
18.1. Introduction
18.2. Multi-wire Sawing Process
18.3. Determination of Wafer Properties
18.4. Basic Sawing Mechanisms
18.5. Alternative Slicing Technologies
18.6. Grinding, Lapping, and Polishing
18.7. Conclusions and Outlook
Part B. Growth Mechanisms and Dynamics
19. Capillarity and Shape Stability in Crystal Growth from the Melt
19.1. Introduction
19.2. Fundamentals of Capillarity for the Crystal Grower
19.3. Solutions of the Young–Laplace Equation
19.4. Shape Stability Analysis
19.5. Conclusions
20. Heat Transfer Analysis and Design for Bulk Crystal Growth: Perspectives on the Bridgman Method
20.1. Introduction
20.2. Historical Perspective: Experimental Practice
20.3. Heat Transfer Fundamentals
20.4. Heat Transfer in Melt Crystal Growth
20.5. Historical Perspective: Theoretical Developments
20.6. Research Vignette: Bridgman Growth of Cadmium Zinc Telluride
20.7. Final Remarks
21. Fluid Dynamics: Modeling and Analysis
21.1. Introduction
21.2. Diffusion
21.3. Natural and Forced Convections
21.4. External Fields
21.5. Flow Instability
21.6. Impurity Transfer
21.7. Summary
22. The Role of Marangoni Convection in Crystal Growth
22.1. Introduction
22.2. Surface Tension of Molten Materials
22.3. Marangoni Convection
22.4. Marangoni Convection in Crystal Growth
22.5. Concluding Remarks
23. Flow Control by Magnetic Fields during Crystal Growth from Melt
23.1. Introduction
23.2. Selected Fundamentals of Magnetohydrodynamics
23.3. Effects of Steady Magnetic Fields
23.4. Effects of Nonsteady Magnetic Fields
23.5. Combined Action of Various Types of Magnetic Fields and Electric Currents
23.6. Conclusions and Outlook
24. Oscillatory-Driven Fluid Flow Control during Crystal Growth from the Melt
24.1. Introduction
24.2. Constant-Speed Rotation in Melts
24.3. Accelerated Crucible Rotation Technique
24.4. Axial Vibration Control
24.5. Other Types of Oscillatory Techniques
24.6. Conclusions and Outlook
25. Segregation and Component Distribution
25.1. Introduction
25.2. Segregation Coefficients
25.3. Limit Theories: “Perfect Mixing” and “No-Mixing”
25.4. Convective Heat and Mass Transfer
25.5. Segregation Theories Based on Solute Layer Thickness
25.6. Segregation Model with Nusselt Numbers and Mixed Convection
25.7. Correlations for Nusselt Numbers
25.8. Directional Solidification: Segregation without Forced Convection
25.9. CZ Process: Segregation Controlled by Mixed Convection
25.10. Zone Melting
25.11. Lateral Segregation
25.12. Microsegregation
25.13. Summary
26. Thermal Stress and Dislocations in Bulk Crystal Growth
26.1. Overview
26.2. Thermal Stress in Bulk Single Crystals
26.3. Dislocations in Bulk Single Crystals
26.4. Summary
27. Defect Generation and Interaction during Crystal Growth
27.1. Introduction
27.2. Point Defects
27.3. Dislocations
27.4. Grain Boundaries
27.5. Foreign Phase Particles
27.6. Faceting and Twinning
27.7. Concluding Remarks
28. Automation of Crystal Growth from Melt
28.1. Introduction
28.2. Basics about Control Systems
28.3. Cz Process
28.4. Vertical Bridgman and Vertical Gradient Freeze Process
28.5. Detached Bridgman Process
28.6. Floating Zone Process
28.7. Kyropoulos Process
28.8. Conclusions
29. Fundamentals of Crystal Growth from Solutions
29.1. Introduction
29.2. Low-Temperature Solution Growth
29.3. High-Temperature Solution Growth
29.4. Summary and Outlook
30. Crystallization Mechanisms of High Critical Temperature Superconductors
30.1. Introduction
30.2. High Tc Oxide Superconductors
30.3. Requirement for Applications of HTSC Materials; Key Factors for Higher Jc
30.4. Phase Diagram of HTSC Material
30.5. Bulk Crystal Growth Methods from the Melt
30.6. Single Crystal Growth Methods from the Solution
30.7. Controlling Factors of Crystal Growth from the Melt and Solution
30.8. Crystal Growth Mechanism
30.9. Tetragonal to Orthorhombic Phase Transition (Twin Formation)
30.10. Conclusion
31. Crystallization in Gels
31.1. Introduction
31.2. Hydrogels, Organic Gels, and Aerogels
31.3. Crystal Growth in Gels of Small Molecules, Minerals, and Biological Macromolecules in Gels
31.4. General Remarks and Future of Crystal Growth in Gels
32. Fundamentals of Industrial Crystallization
32.1. Introduction
32.2. Product Quality
32.3. Crystallization
32.4. Crystal Nucleation
32.5. Crystal Growth
32.6. Crystallization Process Configuration
32.7. Ensuring Product Quality in the Future
Index
Preface to Volume II
List of Contributors
Part A. Basic Techniques
1. Crystal Growth in Geology: Patterns on the Rocks
1.1. Introduction
1.2. Geological Scenarios for Crystal Growth
1.3. Deciphering Geological Information from Crystal Morphology
1.4. Decoding Polycrystalline Textures from Nucleation and Growth
1.5. The Case of Giant Crystals
1.6. Decoding Disequilibrium Mineral Patterns
1.7. Early Earth Mineral Growth, Primitive Life Detection, and Origin of Life
1.8. From Deep Earth to Outer Space
2. Czochralski Growth of Silicon Crystals
2.1. Introduction
2.2. Description of the Czochralski Process
2.3. Global Heat Transfer and Convective Flow
2.4. Transport and Incorporation of Dopants and Impurities
2.5. Oxygen in Silicon
2.6. Intrinsic Point Defects and Their Aggregates
2.7. Economic Aspects of Cz Growth
3. Liquid Encapsulation and Related Technologies for the Czochralski Growth of Semiconductor Compounds
3.1. Introduction
3.2. Pressure-Balancing Czochralski Growth
3.3. Growth Constraints to Crystal Quality in LEC and Related Technologies
3.4. Summary
4. Czochralski Growth of Oxides and Fluorides
4.1. Introduction
4.2. Sapphire Single Crystals
4.3. Calcium Fluoride Crystals
4.4. Large Fluoride Crystals
4.5. Scintillator Crystals
4.6. Summary and Outlook
5. Czochralski and Flux Growth of Crystals for Lasers and Nonlinear Optics
5.1. Laser Crystals Grown by the Czochralski Method
5.2. Nonlinear Optical Borate Crystals Grown by the Flux Method
5.3. Conclusion
6. Growth Measures to Achieve Bulk Single Crystals of Transparent Semiconducting and Conducting Oxides
6.1. Introduction
6.2. Basics of TSO Thermodynamics
6.3. Growth Techniques
6.4. Basic Electrical and Optical Properties of Bulk TSO Crystals
6.5. Summary
7. Floating Zone Growth of Silicon
Preface
7.1. Basics of the Floating Zone Silicon Crystal Growth
7.2. Automation of the Floating Zone Process Using Model-Based Control
7.3. Mathematical Modeling of the Floating Zone Silicon Growth
8. Floating Zone Growth of Oxides and Metallic Alloys
8.1. Optical Floating Zone—Complementary Crystal Growth Technique for New Classes of Oxide Materials
8.2. Floating-Zone Single Crystal Growth of Intermetallic Compounds Using a Two-phase RF Inductor
9. Vertical Bridgman Growth of Binary Compound Semiconductors
9.1. Introduction
9.2. Equipment (Design and Engineering Issues)
9.3. Growth of Binary Compound Semiconductors
9.4. Conclusions
10. Multicrystalline Silicon Crystal Growth for Photovoltaic Applications
10.1. Introduction
10.2. Ingot Growth Methods
10.3. Hot-zone Design
10.4. Nucleation and Grain Control
10.5. Conclusions
11. The Unidirectional Crystallization of Metals and Alloys (Turbine Blades)
11.1. Introduction
11.2. DS Castings Manufacturing
11.3. Nickel-based Superalloys and Heat Treatment Process
11.4. Methodology for Manufacture of Ceramic Shell Molds for Directional Solidification Casting
11.5. Investigation Methods for Directional Solidification Castings
11.6. Numerical Modeling of Thermal and Solidification Processes for Directional Solidification Castings
11.7. Summary
12. Crystal Growth by Traveling Heater Method
12.1. Introduction
12.2. Technology
12.3. Versatile THM
12.4. Materials Grown by THM
12.5. Segregation, Purification
12.6. Mass and Heat Transport, Simulation and Modeling
12.7. Single Crystal Growth by THM
12.8. Conclusions
13. Growth of Bulk Nitrides from a Na Flux
13.1. Introduction
13.2. Growth Conditions and Mechanism of the Na Flux Method
13.3. Nucleation Control
13.4. LPE Growth of GaN by the Na Flux Method
13.5. Point Seed and Coalescence Growth Technique
13.6. Summary
14. Hydrothermal Growth of Crystals—Design and Processing
14.1. Introduction
14.2. History of Hydrothermal Growth of Crystals and Current Trends in Hydrothermal Research
14.3. Intelligent Engineering of the Hydrothermal Processes
14.4. Apparatus
14.5. Hydrothermal Processing of Some Selected Crystals
14.6. Hydrothermal Growth of Fine to Nanocrystals
14.7. Conclusions
15. High-Pressure, High-Temperature Solution Growth and Ammonothermal Synthesis of Gallium Nitride Crystals
15.1. Introduction
15.2. High Nitrogen Pressure Solution Growth Method
15.3. Ammonothermal Growth of GaN
15.4. Overall Summary with an Outlook into the Future
16. Vapor Transport Growth of Wide Bandgap Materials
16.1. Introduction
16.2. High Temperature Sublimation Growth of Wide Bandgap Materials (SiC and AlN)
16.3. HVPE of Nitride Semiconductors (AlN, GaN, InN, and Ternary Alloys)
16.4. Conclusion
17. Crystal Growth of Diamond
17.1. Introduction
17.2. High Pressure Crystal Growth of Diamond
17.3. Growth of Diamond from Gas Phase
17.4. Applications
17.5. Conclusions
18. Wafer Processing
18.1. Introduction
18.2. Multi-wire Sawing Process
18.3. Determination of Wafer Properties
18.4. Basic Sawing Mechanisms
18.5. Alternative Slicing Technologies
18.6. Grinding, Lapping, and Polishing
18.7. Conclusions and Outlook
Part B. Growth Mechanisms and Dynamics
19. Capillarity and Shape Stability in Crystal Growth from the Melt
19.1. Introduction
19.2. Fundamentals of Capillarity for the Crystal Grower
19.3. Solutions of the Young–Laplace Equation
19.4. Shape Stability Analysis
19.5. Conclusions
20. Heat Transfer Analysis and Design for Bulk Crystal Growth: Perspectives on the Bridgman Method
20.1. Introduction
20.2. Historical Perspective: Experimental Practice
20.3. Heat Transfer Fundamentals
20.4. Heat Transfer in Melt Crystal Growth
20.5. Historical Perspective: Theoretical Developments
20.6. Research Vignette: Bridgman Growth of Cadmium Zinc Telluride
20.7. Final Remarks
21. Fluid Dynamics: Modeling and Analysis
21.1. Introduction
21.2. Diffusion
21.3. Natural and Forced Convections
21.4. External Fields
21.5. Flow Instability
21.6. Impurity Transfer
21.7. Summary
22. The Role of Marangoni Convection in Crystal Growth
22.1. Introduction
22.2. Surface Tension of Molten Materials
22.3. Marangoni Convection
22.4. Marangoni Convection in Crystal Growth
22.5. Concluding Remarks
23. Flow Control by Magnetic Fields during Crystal Growth from Melt
23.1. Introduction
23.2. Selected Fundamentals of Magnetohydrodynamics
23.3. Effects of Steady Magnetic Fields
23.4. Effects of Nonsteady Magnetic Fields
23.5. Combined Action of Various Types of Magnetic Fields and Electric Currents
23.6. Conclusions and Outlook
24. Oscillatory-Driven Fluid Flow Control during Crystal Growth from the Melt
24.1. Introduction
24.2. Constant-Speed Rotation in Melts
24.3. Accelerated Crucible Rotation Technique
24.4. Axial Vibration Control
24.5. Other Types of Oscillatory Techniques
24.6. Conclusions and Outlook
25. Segregation and Component Distribution
25.1. Introduction
25.2. Segregation Coefficients
25.3. Limit Theories: “Perfect Mixing” and “No-Mixing”
25.4. Convective Heat and Mass Transfer
25.5. Segregation Theories Based on Solute Layer Thickness
25.6. Segregation Model with Nusselt Numbers and Mixed Convection
25.7. Correlations for Nusselt Numbers
25.8. Directional Solidification: Segregation without Forced Convection
25.9. CZ Process: Segregation Controlled by Mixed Convection
25.10. Zone Melting
25.11. Lateral Segregation
25.12. Microsegregation
25.13. Summary
26. Thermal Stress and Dislocations in Bulk Crystal Growth
26.1. Overview
26.2. Thermal Stress in Bulk Single Crystals
26.3. Dislocations in Bulk Single Crystals
26.4. Summary
27. Defect Generation and Interaction during Crystal Growth
27.1. Introduction
27.2. Point Defects
27.3. Dislocations
27.4. Grain Boundaries
27.5. Foreign Phase Particles
27.6. Faceting and Twinning
27.7. Concluding Remarks
28. Automation of Crystal Growth from Melt
28.1. Introduction
28.2. Basics about Control Systems
28.3. Cz Process
28.4. Vertical Bridgman and Vertical Gradient Freeze Process
28.5. Detached Bridgman Process
28.6. Floating Zone Process
28.7. Kyropoulos Process
28.8. Conclusions
29. Fundamentals of Crystal Growth from Solutions
29.1. Introduction
29.2. Low-Temperature Solution Growth
29.3. High-Temperature Solution Growth
29.4. Summary and Outlook
30. Crystallization Mechanisms of High Critical Temperature Superconductors
30.1. Introduction
30.2. High Tc Oxide Superconductors
30.3. Requirement for Applications of HTSC Materials; Key Factors for Higher Jc
30.4. Phase Diagram of HTSC Material
30.5. Bulk Crystal Growth Methods from the Melt
30.6. Single Crystal Growth Methods from the Solution
30.7. Controlling Factors of Crystal Growth from the Melt and Solution
30.8. Crystal Growth Mechanism
30.9. Tetragonal to Orthorhombic Phase Transition (Twin Formation)
30.10. Conclusion
31. Crystallization in Gels
31.1. Introduction
31.2. Hydrogels, Organic Gels, and Aerogels
31.3. Crystal Growth in Gels of Small Molecules, Minerals, and Biological Macromolecules in Gels
31.4. General Remarks and Future of Crystal Growth in Gels
32. Fundamentals of Industrial Crystallization
32.1. Introduction
32.2. Product Quality
32.3. Crystallization
32.4. Crystal Nucleation
32.5. Crystal Growth
32.6. Crystallization Process Configuration
32.7. Ensuring Product Quality in the Future
Index
- No. of pages: 1418
- Language: English
- Edition: 2
- Volume: 2A-2B
- Published: November 4, 2014
- Imprint: Elsevier
- Hardback ISBN: 9780444633033
- eBook ISBN: 9780444633064
PR
Peter Rudolph
Affiliations and expertise
Crystal Technology Consulting (CTC), Schönefeld, Germany