GaN Transistor Modeling for RF and Power Electronics
Using The ASM-HEMT Model
- 1st Edition - May 20, 2024
- Imprint: Woodhead Publishing
- Authors: Yogesh Singh Chauhan, Ahtisham Ul Haq Pampori, Sheikh Aamir Ahsan
- Language: English
- Paperback ISBN:9 7 8 - 0 - 3 2 3 - 9 9 8 7 1 - 0
- eBook ISBN:9 7 8 - 0 - 3 2 3 - 9 9 9 4 0 - 3
GaN Transistor Modeling for RF and Power Electronics: Using The ASM-GaN-HEMT Model covers all aspects of characterization and modeling of GaN transistors for both RF and Power ele… Read more
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Request a sales quoteGaN Transistor Modeling for RF and Power Electronics: Using The ASM-GaN-HEMT Model covers all aspects of characterization and modeling of GaN transistors for both RF and Power electronics applications. Chapters cover an in-depth analysis of the industry standard compact model ASM-HEMT for GaN transistors. The book details the core surface-potential calculations and a variety of real device effects, including trapping, self-heating, field plate effects, and more to replicate realistic device behavior. The authors also include chapters on step-by-step parameter extraction procedures for the ASM-HEMT model and benchmark test results.
GaN is the fastest emerging technology for RF circuits as well as power electronics. This technology is going to grow at an exponential rate over the next decade. This book is envisioned to serve as an excellent reference for the emerging GaN technology, especially for circuit designers, materials science specialists, device engineers and academic researchers and students.
- Provides an overview of the operation and physics of GaN-based transistors
- Features in-depth description (by the developers of the model) of all aspects of the industry standard ASM-HEMT model for GaN circuits
- Details parameter extraction of GaN devices and measurement data requirements for GaN model extraction
Materials Scientists and Engineers; Electrical Engineers; Physicists
- Cover image
- Title page
- Table of Contents
- Copyright
- Preface
- Part One: Introduction
- 1: GaN HEMTs
- Abstract
- 1.1. History
- 1.2. GaN HEMT structure and principle of operation
- 1.3. Electrical characteristics of GaN HEMT
- 1.4. Design considerations for power GaN HEMTs
- 1.5. Design considerations for RF GaN HEMTs
- References
- 2: Modeling approaches for GaN HEMTs
- Abstract
- 2.1. Available models in the literature
- 2.2. Table-based models
- 2.3. Empirical models
- 2.4. ANN-based models
- 2.5. Physics-based models
- References
- Part Two: ASM-HEMT model
- 3: Surface potential, 2DEG, and the drain current model
- Abstract
- 3.1. ASM-GaN-HEMT model
- References
- 4: Self-heating and temperature effects
- Abstract
- 4.1. Self-heating
- 4.2. Temperature models
- 4.3. Extraction of self-heating parameters
- 4.4. Model validation
- References
- 5: Noise and gate currents
- Abstract
- 5.1. Introduction
- 5.2. Flicker noise model
- 5.3. Results and discussion
- 5.4. Gate current model
- References
- Part Three: ASM-HEMT for GaN power electronics
- 6: GaN power device characterization
- Abstract
- 6.1. Introduction
- 6.2. Gate charge (Qg)
- 6.3. ON-resistance (Rds,ON)
- 6.4. Reverse recovery charge (Qrr)
- References
- 7: Terminal charges and capacitances
- Abstract
- 7.0.1. Device description
- 7.1. TCAD simulation
- 7.2. Model description
- 7.3. Parameter extraction and model validation
- 7.4. Mixed-mode simulation setup
- References
- 8: GaN trapping
- Abstract
- 8.1. Introduction
- 8.2. Characterizing trapping effects in GaN HEMTs
- 8.3. Trap models in ASM-HEMT
- 8.4. Validation of trap models
- References
- Part Four: ASM-HEMT for GaN RF electronics
- 9: RF characterization of AlGaN/GaN HEMTs
- Abstract
- 9.1. Terminology
- 9.2. Instrumentation
- References
- 10: RF modeling – I
- Abstract
- 10.1. Introduction
- 10.2. Model description
- 10.3. Modeling of trapping effects
- 10.4. RF parameter extraction
- 10.5. Large-signal model behavior
- 10.6. Statistical simulation using large-signal model
- References
- 11: RF modeling – II
- Abstract
- 11.1. Introduction
- 11.2. Small-signal model extraction technique
- 11.3. Stability analysis
- 11.4. Kink effect in h21
- 11.5. Kink effect in S22
- References
- Part Five: Miscellaneous
- 12: Parameter extraction
- Abstract
- 12.1. DC parameter extraction
- References
- 13: Model quality testing
- Abstract
- 13.1. Symmetry tests
- References
- Index
- Edition: 1
- Published: May 20, 2024
- Imprint: Woodhead Publishing
- No. of pages: 425
- Language: English
- Paperback ISBN: 9780323998710
- eBook ISBN: 9780323999403
YC
Yogesh Singh Chauhan
Yogesh Singh Chauhan is a Chair Professor in the Department of Electrical Engineering at the Indian Institute of Technology Kanpur, India. He is the developer of several industry standard models: ASM-HEMT, BSIM-BULK (formerly BSIM6), BSIM-CMG, BSIM-IMG, BSIM4 and BSIM-SOI models. His research group is involved in developing compact models for GaN transistors, FinFET, nanosheet/gate-all-around FETs, FDSOI transistors, negative capacitance FETs and 2D FETs. His research interests are RF characterization, modeling, and simulation of semiconductor devices.
Affiliations and expertise
Chair Professor, Department of Electrical Engineering, Indian Institute of Technology Kanpur, IndiaAP
Ahtisham Ul Haq Pampori
Ahtisham Ul Haq Pampori is a postdoctoral researcher at the Berkeley Device Modeling Center (BDMC), University of California, Berkeley. His research focuses on developing advanced semiconductor device models, particularly next-generation BSIM models for field-effect transistors. He earned his doctorate from the Indian Institute of Technology Kanpur, with a focus on GaN HEMT RF device characterization and modeling. A recipient of the Prime Minister’s Research Fellowship, Ahtisham has extensive industry experience collaborating on GaN HEMT characterization and modeling. Prior to academia, he was an Associate Consultant at Frost & Sullivan, specializing in Cloud and Big Data.
Affiliations and expertise
Department of Electrical Engineering and Computer Sciences, University of California Berkeley, Berkeley, CA, United StatesSA
Sheikh Aamir Ahsan
Sheikh Aamir Ahsan possesses expertise in state-of-the-art RF and power GaN SPICE models. Originating from the development of the ASM GaN model during his doctoral studies at IIT Kanpur, presently serving as an Assistant Professor at the National Institute of Technology Srinagar (NITSRI), his team leads the advancement of power GaN technology through modeling and design enablement frameworks. Acting as a consultant for multiple industrial partners, his impact extends beyond academia, as his GaN research seamlessly integrates into commercial SPICE simulators, influencing the trajectory of GaN product development and application globally. He was awarded the Startup Research Grant in 2019 by the Science and Engineering Research Board, India.
Affiliations and expertise
Assistant Professor, Department of Electronics and Communication Engineering, National Institute of Technology, Srinagar, IndiaRead GaN Transistor Modeling for RF and Power Electronics on ScienceDirect