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FinFET/GAA Modeling for IC Simulation and Design: Using the BSIM-CMG Standard, Second Edition is the first to book to explain FinFET modeling for IC simulation and the industry… Read more
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FinFET/GAA Modeling for IC Simulation and Design: Using the BSIM-CMG Standard, Second Edition is the first to book to explain FinFET modeling for IC simulation and the industry standard – BSIM-CMG - describing the rush in demand for advancing the technology from planar to 3D architecture as now enabled by the approved industry standard. The book gives a strong foundation on the physics and operation of FinFET, details aspects of the BSIM-CMG model such as surface potential, charge and current calculations, and includes a dedicated chapter on parameter extraction procedures, thus providing a step-by-step approach for the efficient extraction of model parameters.
With this book, users will learn Why you should use FinFET, The physics and operation of FinFET Details of the FinFET standard model (BSIM-CMG), Parameter extraction in BSIM-CMG FinFET circuit design and simulation, and more.
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Yogesh Singh Chauhan is a Professor at the Indian Institute of Technology in Kanpur, India. He is the developer of several industry standard SPICE models, including the ASM-HEMT model and the BSIMBULK (formerly BSIM6), BSIM-CMG, BSIM-IMG, BSIM4, and BSIM-SOI models. His research interests encompass the characterization, modeling, and simulation of semiconductor devices and RF circuit design. He is a Fellow of IEEE and the Indian National Academy of Engineering. He is the Editor of IEEE Transactions on Electron Devices and Distinguished Lecturer of the IEEE Electron Devices Society. He is the chairperson of the IEEE-EDS Compact Modeling Committee and IEEE Uttar Pradesh section. He has published more than 400 papers in international journals and conference proceedings.
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Girish Pahwa is an Assistant Professor, at the International College of Semiconductor Technology, National Yang Ming Chiao Tung University, Hsinchu City, Taiwan. His research interests include modeling, simulation, and device–circuit co-design of advanced and emerging transistor technologies, especially ferroelectric devices, cryogenic-CMOS, and oxide semiconductors.
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