Field-Effect and Bipolar Power Transistor Physics
- 1st Edition - June 28, 1981
- Imprint: Academic Press
- Author: Adolph Blicher
- Language: English
- Paperback ISBN:9 7 8 - 0 - 1 2 - 4 3 1 7 3 2 - 1
- eBook ISBN:9 7 8 - 0 - 3 2 3 - 1 5 5 4 0 - 3
Field-Effect and Bipolar Power Transistor Physics introduces the physics of operation of power transistors. It deals with bipolar devices as well as field-effect power transistors.… Read more
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Request a sales quoteField-Effect and Bipolar Power Transistor Physics introduces the physics of operation of power transistors. It deals with bipolar devices as well as field-effect power transistors. The book provides an up-to-date account of the progress made in power transistor design. This volume consists of three parts. Part I examines general considerations and reviews semiconductor surface theory as a background to understanding surface phenomena. It also discusses the effect of high carrier concentration on the semiconductor properties. Part II deals with bipolar transistors and the basic structures of power transistors. Part III discusses junction field-effect and surface field-effect transistors. This book is written for electrical engineers who design power transistor circuits, device physicists and designers, and university students. The reader should have some familiarity with small signal transistor physics as the presentation is at the senior undergraduate or first-year graduate level.
Preface
Acknowledgments
Selected List of Symbols
Part I General Considerations
Chapter 1 Semiconductor Surface Theory Concepts
1.1 Flat-Band Voltage
1.2 Surface Potential in Equilibrium
1.3 Surface Charges in Strong Inversion
1.4 Threshold Voltage for Strong Inversion
1.5 Threshold Voltage under Nonequilibrium Conditions
1.6 Channel Charge under Strong Inversion in Nonequilibrium
1.7 MOS Capacitance
1.8 Silicon Surface Charges and States
1.9 Radiation Effects
1.10 Impurity Redistribution at the Oxidized Silicon Surface
1.11 Surface Mobility
References
Chapter 2 Semiconductor Properties at High Carrier Concentrations
2.1 Ambipolar Mobility an d Diffusivity
2.2 Carrier-Carrier Scattering
2.3 Mobility versus Impurity Concentration
2.4 Carrier Lifetime at High Injection Levels
2.5 Carrier Concentration Effect on Silicon Energy Band Gap Narrowing
2.6 Intrinsic Carrier Concentration at High Doping Levels
References
Chapter 3 Avalanche Breakdown
3.1 Avalanche Breakdown Voltage Calculations
3.2 p-i-n Diode Avalanche Breakdown
3.3 Plane (One-Dimensional) Junction Breakdown
3.4 Planar Junction Breakdown
3.5 Avalanche Breakdown Voltage Temperature Dependence
References
Chapter 4 Avalanche Breakdown Improvement Methods
4.1 Field Plate
4.2 Diffused Guard Ring
4.3 Equipotential Ring and Channel Stopper
4.4 Resistive Field Plate
4.5 Field Limiting Ring
4.6 Junction Beveling
4.7 Depletion Etch Method
4.8 Substrate Etch Termination versus Positive Beveling
4.9 Depletion Region Charge Control by Ion Implantation
References
Chapter 5 Selected Fabrication Techniques
5.1 Neutron Transmutation Doping (NTD)
5.2 Ion Implantation
5.3 Dry Etching
5.4 Minority Carrier Lifetime Control
5.5 Surface Stability and Device Passivation
References
Part II Bipolar Power Transistors
Chapter 6 Power Transistor Structures. Bipolar Transistor Models
6.1 Power Transistor Structures
6.2 Bipolar Transistor Models
References
Chapter 7 Current Gain at High Carrier Concentrations
7.1 Emitter Efficiency versus Emitter Concentration
7.2 Base Widening at High Currents
7.3 Emitter Current Crowding
7.4 Current Gain Fall-Off at High Currents
7.5 Current Gain Temperature Dependence
7.6 Methods of Gain Improvement
References
Chapter 8 Current-Voltage Characteristics of Power Transistors
8.1 Saturation Region
8.2 Quasi-Saturation Region
8.3 Collector-to-Emitter Breakdown Voltage
References
Chapter 9 Frequency Response. Switching Transient. Microwave Transistors
9.1 Bipolar Power Transistors Frequency Response
9.2 Bipolar Power Transistors Switching Transient
9.3 Bipolar Microwave Transistors
References
Chapter 10 Transistor Thermal Properties. Instabilities
10.1 Junction Temperature
10.2 Transistor Thermal Equivalent Circuit
10.3 Thermal Runaway
10.4 Principle of Least Entropy Generation. Current Filaments Formation. Hot Spots
10.5 Second Breakdown
10.6 Safe Operating Area (SOA)
10.7 Stable Hot Spots
References
Part III Field-Effect (Unipolar) Transistors
Chapter 11 Junction Field-Effect Transistors (JFETs)
11.1 JFET Current-Voltage Characteristics
11.2 JFET Incremental Circuit Model
11.3 Excess Gate Leakage Current and Drain Breakdown
11.4 Output Power from a JFET
11.5 JFET with Triodelike (Nonsaturating) Characteristics
11.6 JFET Structures
References
Chapter 12 Insulated Gate Field-Effect Transistors
12.1 MOS Transistor Static Characteristics
12.2 Two-Dimensional Current Flow in the Channel
12.3 Threshold Voltage of Short Channel MOS Transistor
12.4 Back-Bias Effect on the Threshold Voltage
12.5 MOS Transistor Threshold Control
12.6 Incremental MOS Transistor Parameters
12.7 MOS Transistor Incremental Circuit Model
12.8 Cut-Off Frequency fT
12.9 MOS Transistors with Triodelike Characteristics
12.10 Voltage Breakdown in MOS Transistors
12.11 Hot-Electron Effects
References
Chapter 13 MOS Power Transistor Structures and Design Considerations
13.1 MOST as a Power Amplifier
13.2 MOS Power Transistor as a Switch
13.3 Power MOST Structures
13.4 Design Considerations for Power DMOST
13.5 Gate Capacitance of MOST with Drift Region
13.6 DMOST Voltage Breakdown
13.7 DMOST Second Breakdown
13.8 Temperature Effects on MOS Transistor Characteristics-Safe Operating Area (SOA)
References
Index
- Edition: 1
- Published: June 28, 1981
- Imprint: Academic Press
- No. of pages: 336
- Language: English
- Paperback ISBN: 9780124317321
- eBook ISBN: 9780323155403
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