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Comprehensive Semiconductor Science and Technology
- 1st Edition - January 28, 2011
- Editors: Pallab Bhattacharya, Roberto Fornari, Hiroshi Kamimura
- Language: English
- Hardback ISBN:9 7 8 - 0 - 4 4 4 - 5 3 1 4 3 - 8
- eBook ISBN:9 7 8 - 0 - 4 4 4 - 5 3 1 5 3 - 7
- eBook ISBN:9 7 8 - 0 - 0 8 - 0 9 3 2 2 9 - 3
- eBook ISBN:9 7 8 - 0 - 0 8 - 0 9 3 2 2 8 - 6
Semiconductors are at the heart of modern living. Almost everything we do, be it work, travel, communication, or entertainment, all depend on some feature of semiconductor… Read more
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Request a sales quoteSemiconductors are at the heart of modern living. Almost everything we do, be it work, travel, communication, or entertainment, all depend on some feature of semiconductor technology. Comprehensive Semiconductor Science and Technology, Six Volume Set captures the breadth of this important field, and presents it in a single source to the large audience who study, make, and exploit semiconductors. Previous attempts at this achievement have been abbreviated, and have omitted important topics. Written and Edited by a truly international team of experts, this work delivers an objective yet cohesive global review of the semiconductor world.The work is divided into three sections. The first section is concerned with the fundamental physics of semiconductors, showing how the electronic features and the lattice dynamics change drastically when systems vary from bulk to a low-dimensional structure and further to a nanometer size. Throughout this section there is an emphasis on the full understanding of the underlying physics. The second section deals largely with the transformation of the conceptual framework of solid state physics into devices and systems which require the growth of extremely high purity, nearly defect-free bulk and epitaxial materials. The last section is devoted to exploitation of the knowledge described in the previous sections to highlight the spectrum of devices we see all around us.
- Provides a comprehensive global picture of the semiconductor world
- Each of the work's three sections presents a complete description of one aspect of the whole
- Written and Edited by a truly international team of experts
Faculty, Scientists, Researchers and Graduate Students in Physics, Materials Science, (Bio)Chemistry or Engineering; Departments at universities worldwide. Optoelectronics, Condensed Matter Science, Surface Science, Magnetism and Quantum Mechanics; Researchers in large corporations and governmental labs working with Semiconductors
Section 1: Physics and Fundamental Theory
Volume 1 - Physics and Fundamental Theory Part 1:
Electrons in semiconductors: Empirical and ab initio theories, Ab initio theories of the structural, electronic and optical properties of semiconductors: bulk crystals to nanostructures, Impurity Bands in Group-IV Semiconductors, Integer Quantum Hall Effect, Composite fermion theory of the fractional Quantum Hall Effect, Ballistic Transport in GaAs/AIGaAs Heterostructures, Spin-Hall effect: Theoretical, Thermal conduction / thermoelectric power, Electronic structures of Quantum Dots, Control over single electron spins in quantum dots, Atomic structures and electronic properties of semiconductor interfaces
Volume 2 - Physics and Fundamental Theory Part 2:
Contact hyperfine interactions in semiconductor heterostructures, Optical properties of semiconductors, Bloch oscillation and ultrafast coherent optical phenomena, Optical properties of Si Semiconductor nanocrystals, Excitons and polaritons in semiconductors, Magneto-spectroscopy of semiconductors, Microcavities of semiconductor quantum structures, Semimagnetic semiconductors, Electronic stats and properties of carbon crystalline from graphene to carbon nanotubes, Angle-Resolved Photoemission Spectroscopy of Graphen, Graphite, and Related Compounds, Theory of Superconductivity in Graphite Intercalation Compounds
Section 2: Materials, Preparation and Properties
Volume 3 - Materials, Preparation and Properties Part 1:
Crystal Growth, Molecular Beam Epitaxy, Bulk Growth of Crystals of III-V Compound Semiconductors, New Developments in Czrchralski Silicon, Growth of CdZnTe Bulk Crystal, Growth of bulk SiC with Low Defect Densities and SiC epitaxy, Growth of Bulk GaN Crystals, Growth of bulk A1N Crystals, Growth of Bulk ZnO, Organometallic Vapor Phase Growth of Group III Nitrides, ZnO epitaxial growth, Nanostructures of metal oxides
Volume 4 - Materials, Preparation and Properties Part 2:
Integration of Dissimilar Materials, Ion Implantation in Group III Nitrides, Contacts to Wide Band Gap Semiconductors, Formation of Ultra-shallow Junctions, New High-K Materials for C-MOS Applications, Ferroelectric thin layers, Amorphous chalcogenides, Scanning tunnelling microscopy and spectroscopy of semiconductor materials, Study of Semiconductors by High Resolution Microscopy and Aberration Corrected Microscopy, Assessment of semiconductors by Scanning Electron Microscopy Techniques, Characterization of Semicounductors by X-Ray Diffraction and Topography, Electronic Energy Levels in Group III Nitrides, Organic Semiconductors
Section 3: Devices and Applications
Volume 5 - Devices and Applications Part 1:
SiGe/Si Heterojunction Bipolar Transistors and Circuits, Si MOSFETs for VLSI: Scaling Issues and Limits, High Electron Mobility Transistors and Their Applications, High-Frequency and High-Speed InP-Based Heterojunction Bipolar Transistors, Negative Differential Resistance Devices and Circuits, High-Frequency Nitride-Based Field Effect Transistors, Wide band Gap Semiconductor Power Devices, Single Electron Transistors and Their Applications, Molecular Electronics, Electronic and Optoelectronic Properties and Applications of Carbon Nanotubes, Flexible Electronics, MEMS Based Sensors, Avalanche Photodiodes, Optoelectronic Devices and Their Integration by Disordering, Quantum Well Lasers and Their Applications, Quantum Cascade Lasers, Slow Light Devices and Applications
Volume 6 - Devices and Applications Part 2:
Short Wavelength Light Sources, Nitride-Based LEDs and Superluminescent LEDs, ZnO Based Materials and Devices, MCT Materials and Detectors, Quantum Well Infrared Detectors, Type II Superlattice Detectors, Terahertz Detection Devices, Amorphous and Nanocrystal Silicon Solar Cells, Quantum Dot Lasers: Physics and Applications, High-Performance Quantum Dot Lasers, Quantum Dot Infrared Photodetectors, Photonic Crystal Microcavity Light Sources, Photonic Crystal Waveguides and Filters, Spintronic Devices, Spin-Based Semiconductor Heterostructure Devices, Spin-Polarized Transport and Spintronic Devices
List of topics:
Electrons in semiconductors: Empirical and ab initio theories
Ab initio theories of the structural, electronic and optical properties of semiconductors: bulk crystals to nanostructures
Impurity Bands in Group-IV Semiconductors
Integer Quantum Hall Effect
Composite fermion theory of the fractional quantum Hall effect
Ballistic Transport in GaAs/AlGaAs Heterostructures
Spin-Hall effect: Theoretical
Thermal conduction / thermoelectric power
Electronic structures of Quantum Dots
Control over single electron spins in quantum dots
Atomic structures and electronic properties of semiconductor interfaces
Contact hyperfine interactions in semiconductor heterostructures
Optical properties of semiconductors
Bloch oscillation and ultrafast coherent optical phenomena
Optical properties of Si semiconductor nanocrystals
Excitons and polaritons in semiconductors
Magneto-spectroscopy of semiconductors
Microcavities of semiconductor quantum structures
Semimagnetic semiconductors
Electronic states and properties of carbon crystalline from graphene to carbon nanotubes
Angle-Resolved Photoemission Spectroscopy of Graphen, Graphite, and Related Compounds
Theory of Superconductivity in Graphite Intercalation Compounds
Crystal Growth: an Overview
Molecular Beam Epitaxy: An Overview
Bulk Growth of Crystals of III-V Compound Semiconductors
New Developments in Czochralski Silicon
Growth of CdZnTe Bulk Crystal
Growth of bulk SiC with Low Defect Densities and SiC epitaxy
Growth of Bulk GaN Crystals
Growth of bulk A1N Crystals
Growth of Bulk ZnO
Organometallic Vapor Phase Growth of Group III Nitrides
ZnO epitaxial growth
Nanostructures of metal oxides
Growth of Low Dimensional Semiconductors Structures
Integration of Dissimilar Materials
Ion Implantation in Group III Nitrides
Contacts to Wide Band Gap Semiconductors
Formation of Ultra-shallow Junctions
New High-K Materials for C-MOS Applications
Ferroelectric thin layers
Amorphous chalcogenides
Scanning tunneling microscopy and spectroscopy of semiconductor materials
Study of Semiconductors by High Resolution Microscopy and Aberration Corrected Microscopy
Assessment of semiconductors by Scanning Electron Microscopy Techniques
Characterization of Semiconductors by X-Ray Diffraction and Topography
Electronic Energy Levels in Group III Nitrides
Organic Semiconductors
SiGe/Si Heterojunction Bipolar Transistors and Circuits
Si MOSFETs for VLSI: Scaling Issues and Limits
High Electron Mobility Transistors and Their Applications
High-Frequency and High-Speed InP-Based Heterojunction Bipolar Transistors
Negative Differential Resistance Devices and Circuits
High-Frequency Nitride-Based Field Effect Transistors
Wide band Gap Semiconductor Power Devices
Single Electron Transistors and Their Applications
Molecular Electronics
Electronic and Optoelectronic Properties and Applications of Carbon Nanotubes
Flexible Electronics
MEMS Based Sensors
Avalanche Photodiodes
Optoelectronic Devices and Their Integration By Disordering
Quantum Well Lasers and Their Applications
Quantum Cascade Lasers
Slow Light Devices and Applications
Short Wavelength Light Sources
Nitride-Based LEDs and Superluminescent LEDs
ZnO Based Materials and Devices
MCT Materials and Detectors
Quantum Well Infrared Detectors
Type II Superlattice Detectors
Terahertz Detection Devices
Amorphous and Nanocrystal Silicon Solar Cells
Quantum Dot Lasers: Physics and Applications
High-Performance Quantum Dot Lasers
Quantum Dot Infrared Photodetectors
Photonic Crystal Microcavity Light Sources
Photonic Crystal Waveguides and Filters
Spintronic Devices
Spin-Based Semiconductor Heterostructure Devices
Spin-Polarized Transport and Spintronic Devices
- No. of pages: 7500
- Language: English
- Edition: 1
- Published: January 28, 2011
- Imprint: Elsevier Science
- Hardback ISBN: 9780444531438
- eBook ISBN: 9780444531537
- eBook ISBN: 9780080932293
- eBook ISBN: 9780080932286
PB
Pallab Bhattacharya
Pallab Bhattacharya is the Charles M. Vest Distinguished University Professor of Electrical Engineering and Computer Science and the James R. Mellor Professor of Engineering in the Department of Electrical Engineering and Computer Science at the University of Michigan, Ann Arbor. He received the M. Eng. and Ph.D. degrees from the University of Sheffield, UK, in 1976 and 1978, respectively. Professor Bhattacharya was an Editor of the IEEE Transactions on Electron Devices and is Editor-in-Chief of Journal of Physics D. He has edited Properties of Lattice-Matched and Strained InGaAs (UK: INSPEC, 1993) and Properties of III-V Quantum Wells and Superlattices (UK: INSPEC, 1996). He has also authored the textbook Semiconductor Optoelectronic Devices (Prentice Hall, 2nd edition). His teaching and research interests are in the areas of compound semiconductors, low-dimensional quantum confined systems, nanophotonics and optoelectronic integrated circuits. He is currently working on highspeed quantum dot lasers, quantum dot infrared photodetectors, photonic crystal quantum dot devices, and spin-based heterostructure devices. From 1978 to 1983, he was on the faculty of Oregon State University, Corvallis, and since 1984 he has been with the University of Michigan. He was an Invited Professor at the Ecole Polytechnic Federale de Lausanne, Switzerland, from 1981 to 1982.
Professor Bhattacharya is a member of the National Academy of Engineering. He has received the John Simon Guggenheim Fellowship, the IEEE (EDS) Paul Rappaport Award, the IEEE (LEOS) Engineering Achievement Award, the Optical Society of America (OSA) Nick Holonyak Award, the SPIE Technical Achievement Award, the Quantum Devices Award of the International Symposium on Compound Semiconductors, and the IEEE (Nanotechnology Council) Nanotechnology Pioneer Award. He has also received the S.S. Attwood Award, the Kennedy Family Research Excellence Award, and the Distinguished Faculty Achievement Award from the University of Michigan. He is a Fellow of the IEEE, the American Physical Society, the Institute of Physics (UK), and the Optical Society of America.
Affiliations and expertise
Pallab Bhattacharya, College of Engineering, University of Michigan, USA.RF
Roberto Fornari
Professor Roberto Fornari is a professor at the University of Parma in Parma, Italy. From 1981 to 2003, Roberto Fornari was at the Institute for Electronic and Magnetic Materials of the Italian National Research Council, and from 2003 to 2013 he was Director of the Leibniz Institute for Crystal Growth (IKZ) and Full Professor at the Institute of Physics of the Humboldt University, Berlin. His research experience includes bulk and epitaxial semiconductors for advanced applications (GaAs, InP, GaN, AlN and InGaN), semiconducting oxides, solar silicon, silicon nanostructures. His current research focuses on gallium oxide and related alloys for power electronics and UV-detection.
Affiliations and expertise
Department of Physics, University of Parma, ItalyHK
Hiroshi Kamimura
Hiroshi Kamimura is currently a senior adviser of Tokyo University of Science (TUS), and a guest professor of Research Institute for Science and Technology at the TUS. He was awarded a Doctor of Science in Physics from University of Tokyo in 1959. He worked at Bell-Telephone laboratories at Murray Hill, USA as a Member of Technical Staff in 1961 to 64. In 1965 he became a lecturer, then an associate professor and a professor at Dept. of Physics, Faculty of Science in University of Tokyo. In 1974-75 he worked with Sir Nevill Mott as a guest scholar at Cavendish Laboratory in Cambridge, UK. In 1991 he retired from University of Tokyo, and then he became a professor at Dept of Applied Physics, Faculty of Science at the TUS. His interests are in the theory of condensed matter physics and of materials science, in particular semiconductor physics, high temperature superconductivity and superionic conduction. He was President of physical society of Japan in 1984-85, Chairman of IUPAP semiconductor Commission in 1985-90. He is an honorary fellow of Institute of Physics, UK, a life-fellow of American Physical Society, an emeritus professor of University of Tokyo and an emeritus professor of Tokyo University of Science.
Affiliations and expertise
Hiroshi Kamimura, Department of Applied Physics, Tokyo University of Science, Japan.Read Comprehensive Semiconductor Science and Technology on ScienceDirect