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Applied Solid State Science
Advances in Materials and Device Research
1st Edition - December 28, 1975
Editor: Raymond Wolfe
eBook ISBN:9781483214740
9 7 8 - 1 - 4 8 3 2 - 1 4 7 4 - 0
Applied Solid State Science: Advances in Materials and Device Research, Volume 5 covers articles on devices made with Si, GaAs, and CdS and on the photoconductive insulators of… Read more
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Applied Solid State Science: Advances in Materials and Device Research, Volume 5 covers articles on devices made with Si, GaAs, and CdS and on the photoconductive insulators of the xerographic process. The book discusses design ideas and fabrication techniques that have raised the efficiency of microwave generators; as well as xerography and photoinduced discharge characteristics of photoconductive insulators. The text then describes a great variety of devices, both unipolar and dipolar, which make use of the advantages of ion implantation for introducing impurities into silicon in a most controllable manner. The progress made toward the goal of providing a low cost solar energy conversion device for terrestrial applications is also considered. The book further tackles high efficiency impatt diodes; the physics of xerographic photoreceptors; ion implantation in silicon; and cadmium sulfide solar cells. Solid state physicists, materials scientists, electrical engineers, and graduate students studying the subjects being discussed will find the book invaluable.
List of Contributors
Preface
Articles Planned for Future Volumes
High Efficiency Impatt Diodes
I. Introduction
II. Qualitative Theory of High-Efficiency Impatt Diodes
III. Quantitative Discussions of Modified Read Impatt Designs
IV. Experimental Performance
V. Noise Properties and Parasitic Oscillations
VI. Fabrication
VII. Reliability
VIII. Performance Comparisons and Applications
References
Physics of Xerographic Photoreceptors
I. General Introduction
II. Photoconductor Parameters
III. Experimental Techniques
IV. Theory of Photoinduced Discharge
V. Discussion of Experimental Results
VI. Conclusions
References
Ion Implantation in Silicon—Physics, Processing, and Microelectronic Devices
I. Introduction
II. Ion Implantation—Range and Straggle
III. Damage
IV. Processing Considerations
V. Ion-Implanted Devices—p-n Junctions
VI. Ion-Implanted Devices—Field Effect Transistors
VII. Conclusion
References
Cadmium Sulfide Solar Cells
I. Introduction
II. CdS-CuxS Photovoltaic Cell Structures
III. Thin Film Solar Cell Technology
IV. Properties of Cadmium Sulfide and Cuprous Sulfide Layers