Contributors to Volume I
Preface
Articles Planned for Future Volumes
Junction Electroluminescence
I. Introduction
II. Energy-Band Description of Electron States in Crystalline Solids
III. Injection Mechanisms for Electroluminescence in p-n Homojunctions
IV. Electroluminescence Injection Processes Involving Heterojunctions
V. Energy Transport and Carrier Capture Mechanisms in Electroluminescent Devices
VI. Excitation Processes Most Suited to the Identification of Recombination Mechanisms in Semiconductors
VII. Radiative and Competing Nonradiative Carrier Recombination Mechanisms in Semiconductors
VIII. Coherent Stimulated Emission (Laser Action) in Semiconductors
IX. "State of the Art" Efficiencies of Electroluminescent Devices
X. Future Prospects
XI. Appendix: A Brief Survey of Very Recent Work
References
Metal-Insulator-Semiconductor (MIS) Physics
I. Introduction
II. Ideal Metal-Insulator-Semiconductor Diode
III. Surface States
IV. Surface-State Measurement Techniques
V. Charges in the Insulator and Their Effect on the Semiconductor Surface
VI. Effects of Metal Work-Function Differences, Crystal Orientation, Temperature, Illumination, and Irradiation on MIS Characteristics
VII. Surface Varactor, Avalanche, Tunneling, and Electroluminescence in MIS Diodes
VIII. Carrier Transport in Insulating Films
References
Ion Implantation in Semiconductors
I. Introduction
II. Ion Range Distributions
III. Lattice Disorder
IV. Lattice Location of Implanted Atoms
V. Electrical Characteristics
VI. Application of Ion Implantation to Device Fabrication
References
Electron Transport through Insulating Thin Films
I. Introduction
II. Theory: Barrier-Limited Mechanisms
III. Theory: Bulk Conduction Phenomena
IV. Experimental Results: Comparison with Theory
References
Author Index
Subject Index