Advances in Chemical Mechanical Planarization (CMP)

2nd Edition - September 10, 2021
Editor: Babu Suryadevara
Language: English
Paperback ISBN:
9 7 8 - 0 - 1 2 - 8 2 1 7 9 1 - 7
eBook ISBN:
9 7 8 - 0 - 1 2 - 8 2 1 8 1 9 - 8

Advances in Chemical Mechanical Planarization (CMP), Second Edition provides the latest information on a mainstream process that is critical for high-volume, high-yield semicondu… Read more

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Advances in Chemical Mechanical Planarization (CMP), Second Edition provides the latest information on a mainstream process that is critical for high-volume, high-yield semiconductor manufacturing, and even more so as device dimensions continue to shrink. The second edition includes the recent advances of CMP and its emerging materials, methods, and applications, including coverage of post-CMP cleaning challenges and tribology of CMP.

This important book offers a systematic review of fundamentals and advances in the area. Part one covers CMP of dielectric and metal films, with chapters focusing on the use of current and emerging techniques and processes and on CMP of various materials, including ultra low-k materials and high-mobility channel materials, and ending with a chapter reviewing the environmental impacts of CMP processes. New content addressed includes CMP challenges with tungsten, cobalt, and ruthenium as interconnect and barrier films, consumables for ultralow topography and CMP for memory devices. Part two addresses consumables and process control for improved CMP and includes chapters on CMP pads, diamond disc pad conditioning, the use of FTIR spectroscopy for characterization of surface processes and approaches for defection characterization, mitigation, and reduction.

Advances in Chemical Mechanical Planarization (CMP), Second Edition
is an invaluable resource and key reference for materials scientists and engineers in academia and R&D.

Cover Image
Title Page
Copyright
Table of Contents
Contributors
Preface
Part One CMP of dielectric and metal films
1 Chemical and physical mechanisms of dielectric chemical mechanical polishing (CMP)
Abstract
1.1 Introduction
1.2 History of dielectric CMP
1.3 Material removal mechanism of dielectric CMP
1.4 Defectivity of dielectric CMP
1.5 Major applications of dielectric CMP
1.6 Future of dielectric CMP
References
2 Copper chemical mechanical planarization (Cu CMP) challenges in 22 nm back-end-of-line (BEOL) and beyond
Abstract
2.1 Introduction
2.2 Factors that affect Cu CMP at the 22 nm node and beyond
2.3 Conclusions
Acknowledgments
References
3 Electrochemical techniques and their applications for CMP of metal films
Abstract
3.1 Introduction
3.2 Electrochemical basis of metal CMP
3.3 Experimental considerations
3.4 Illustrative applications
3.5 Concluding remarks
Acknowledgement
References
4 Ultra-low-k materials and chemical mechanical planarization (CMP)
Abstract
4.1 Integration of ultra-low-k materials in semiconductor devices
4.2 CMP of ULK materials
4.3 ULK CMP in integrated dual-damascene structures
4.4 Current trends in ULK dielectrics
Acknowledgments
References
5 CMP processing of high mobility channel materials: alternatives to Si
Abstract
5.1 Introduction
5.2 Ge/SiGe as high mobility channel materials
5.3 III–V materials as high mobility channel materials
5.4 Conclusions and future trends
References
6 Multiscale modeling of chemical mechanical planarization (CMP)
Abstract
6.1 Introduction
6.2 CMP models of material removal mechanisms
6.3 CMP models for planarization processes
6.4 Applying CMP models for process characterization
6.5 Future trends
References
7 Polishing of SiC films
Abstract
7.1 Introduction
7.2 Crystalline SiC
7.3 Polishing of amorphous SiC (a:SiC) films
7.4 Polish rates and selectivity with respect to SiO2 films
References
8 Chemical and physical mechanisms of CMP of gallium nitride
Abstract
8.1 Introduction
8.2 Process development history of GaN final treatment
8.3 CMP technology as the substrate final finishing process and its application to GaN substrate
8.4 Colloidal silica CMP of GaN and evaluation of the residual damaged layer
8.5 Preparation for shortening CMP process time
8.6 Superiority of CMP for final processing of GaN (comparison with dry etching)
8.7 Nonequivalent crystallographic planes of GaN and related front/back processing properties: control of substrate warp
8.8 Conclusions
References
9 Abrasive-free and ultra-low abrasive chemical mechanical polishing (CMP) processes
Abstract
9.1 Introduction
9.2 Abrasive-free slurries for poly-Si CMP
9.3 Abrasive-free processes for the Cu damascene CMP process
9.4 Abrasive-free formulations and role of abrasives for barrier CMP
9.5 Future trends
References
10 Transient copper removal rate phenomena with implications for polishing mechanisms
Abstract
10.1 Introduction
10.2 An average removal rate model
10.3 Flash heating from two perspectives
10.4 Transient extension of the average removal rate model
10.5 An example calibration experiment
10.6 Calculating and validating the wafer temperature
10.7 Extension of the flash heating model
10.8 Instantaneous removal rate model parameterization
10.9 Transient removal rate example
10.10 A post-prediction experimental test
10.11 Modeling the effect of rinse water dilution
10.12 Summary and discussion
References
11 Environmental aspects of planarization processes
Abstract
11.1 Introduction
11.2 Wastewater generation and characterization
11.3 Treatment objectives
11.4 CMP wastewater particle characterization and removal
11.5 Copper and copper complexing agents.
11.6 Azoles and azole removal
11.7 Summary
References
Part Two Consumables and process control for improved CMP
12 Preparation and characterization of slurry for CMP
Abstract
12.1 Introduction
12.2 Preparation of slurry for CMP
12.3 Characterizations of slurry for CMP
12.4 Conclusion
References
13 Chemical metrology methods for CMP quality
Abstract
13.1 Introduction
13.2 Particle size distribution
13.3 Density
13.4 Large particle counting
13.5 Zeta potential
13.6 Conductivity
13.7 Titration
13.8 pH
13.9 Viscosity
13.10 Temperature
13.11 Metrology statistical capability
13.12 Bench-top versus in-line measurement
Acknowledgments
References
14 Diamond disc pad conditioning in chemical mechanical polishing
Abstract
14.1 Introduction
14.2 Design and manufacture of diamond disc conditioner
14.3 Diamond disc pad conditioning process control
14.4 Diamond disc pad conditioning modeling and simulation
14.5 Conclusions
References
15 Characterization of surface processes during oxide CMP by in situ FTIR spectroscopy
Abstract
15.1 Introduction
15.2 Silicon dioxide CMP as a topic of fundamental research
15.3 Infrared spectroscopy
15.4 ATR-FTIR spectroscopy
15.5 Si-based reflection elements for ATR-FTIR investigations
15.6 In situ applications of ATR-FTIR spectroscopy using mSREs
15.7 Conclusions
Acknowledgements
References
16 Chemical mechanical polishing (CMP) removal rate uniformity and role of carrier parameters
Abstract
16.1 Rotary table method in several CMP methods
16.2 CMP removal rate uniformity
16.3 Carrier and the roles of carrier parameters
16.4 Profile control
References
17 Approaches to defect characterization, mitigation and reduction
Abstract
17.1 CMP defects: their source and characterization
17.2 Defect mitigation and reduction
17.3 Summary and future challenges
Acknowledgement
References
18 Challenges and solutions for post-CMP cleaning at device and interconnect levels
Abstract
18.1 Introduction
18.2 Traditional post-CMP cleaning solutions
18.3 Post-CMP cleaning solutions for FEOL, MOL, and BEOL applications
18.4 Experimental techniques to evaluate post-CMP cleaning formulations
18.5 Challenges and future directions for post-CMP cleaning
18.6 Conclusions
Acknowledgments
References
19 Applications of chemical mechanical planarization (CMP) to More than Moore devices
Abstract
19.1 Introduction: “More Moore” versus “More than Moore”
19.2 CMP for “More than Moore” devices
19.3 Specific CMP process requirements
19.4 Specific CMP consumables requirements
19.5 Applications
19.6 Conclusions
References
20 CMP for phase change materials
Abstract
20.1 Introduction
20.2 Requirements for GST CMP
20.3 GST CMP issues
20.4 GST polishing mechanism
References
21 CMP pads and their performance
Abstract
21.1 Introduction
21.2 The polishing environment
21.3 Pad taxonomy, key design elements and material properties
21.4 Key elements of pad design
21.5 Material properties of top pads
21.6 Tying things together
References
22 Latest developments in the understanding of PVA brush related issues during post CMP (pCMP) cleaning
Abstract
22.1 Introduction
22.2 PVA brushes for pCMP cleaning
22.3 Control of defects generated from PVA brush
22.4 Conclusions
References
Index

Life Sciences

Physical Sciences & Engineering

Social Sciences & Humanities

Health

Advances in Chemical Mechanical Planarization (CMP)

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Babu Suryadevara

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